SIE818DF-T1-E3

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The SIE818DF-T1-E3 is a low-on-resistance N-channel MOSFET transistor made for use with medium-current DC and AC applications. With a maximum drain-source voltage of 60V and a drain-source current of 6A, this MOSFET provides an efficient performance in diverse areas.

The SIE818DF-T1-E3 provides a total gate charge (Qg) of 75nC max and an maximum drain-source on-resistance (RDS(ON)) at VGS (4V) of 0.07Ω. This MOSFET features an innovative and advanced body diode design providing high-speed operation, low capacitance and superior performance.

The SIE818DF-T1-E3 is ideal for use in a wide range of low-on-resistance applications due to the low RDS(ON). These include motor controls and power tools, motor drives, solar power inverters and board-level power converters. It is particularly suitable for switching applications such as High-Voltage DC/DC converters, High-Voltage and High-Current, low noise switching circuits, and Logic Level switching circuits.

The SIE818DF-T1-E3 works on the principle of MOSFET transistor technology. The MOSFET transistor is a type of field-effect transistor where a voltage or electric field controls the conductivity of a semiconductor material between the source and the drain. The source and drain terminals of the MOSFET transistor are connected to a semiconductor substrate. A controlling gate is used to control the conductivity of the semiconductor material and hence the current flow through the source and drain. The gate behavior is determined by the applied voltage.

The SIE818DF-T1-E3 is an excellent choice for applications which need rapid switching control, is noise-resistant, and features a low dynamic on-resistance. This MOSFET also has excellent parasitic inductance and low logical cross-capacitance which allows for faster switching speeds. The SIE818DF-T1-E3 is a market leading high-performance MOSFET that provides multiple features for use in a variety of low-on-resistance applications.

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