SIE874DF-T1-GE3

SIE874DF-T1-GE3 is an N-channnel enhancement mode field-effect transistor (FET) specially designed for low voltage and high performance power management. This MOSFET is a single, simple and complementary device with dual source leads and gate leads, which has good characteristics, high temperature operating range and improved power performance.

Application Field

SIE874DF-T1-GE3 is typically used in multiple-output switch-mode power supplies (SMPS), DC-DC converters, battery charging regulation, LED backlight displays, mobile communication systems, and motor control. It is widely used in computer, communication, industrial, and automotive electronics.

Working Principle

A FET works by controlling the current flow between two output terminals through a semiconductor channel. N-channel FETs are less expensive, easier to work with, and can switch higher currents than other FETs. The gate voltage is used to control the channel, allowing current to flow when the gate input is low. When the gate voltage is higher than the threshold voltage, the MOSFET goes into enhancement mode and the channel is closed, preventing current flow.

SIE874DF-T1-GE3 device has several features that make it suitable for low voltage and high performance power management. These include an integrated body diode, a low on-resistance value, and an improved immunity to latchup and noise. The integrated body diode significantly reduces conduction losses and switching time, while the low on-resistance reduces power dissipation. The improved immunity to latchup and noise ensures reliable operations.

Moreover, the device has low levels of noise and ripple. Its avalanche energy capability means that it can safely operate in high current situations. Furthermore, its high temperature operating range ensures it can work efficiently in harsher environments. Finally, the device has excellent scalability, allowing designers to use a compatible solution for any application.

Conclusion

In summary, SIE874DF-T1-GE3 is a N-channel enhancement mode field-effect transistor (FET) carefully developed for low voltage and high performance power management. With its integrated body diode, low on-resistance, and improved immunity to latchup and noise, this device is equipped with several features that make it suitable for multiple-output switch-mode power supplies, DC-DC converters, battery charging regulation, LED backlight displays, mobile communication systems and motor control. Overall, it is an excellent solution for demanding power management applications.