
Allicdata Part #: | SIE836DF-T1-GE3TR-ND |
Manufacturer Part#: |
SIE836DF-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 18.3A POLARPAK |
More Detail: | N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 10-PolarPAK® (SH) |
Supplier Device Package: | 10-PolarPAK® (SH) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.2W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 4.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIE836DF-T1-GE3 is a powerful & reliable single 20V N-channel TrenchMOS Logic Level Field-Effect Transistor (MOSFET) which is specifically designed to minimize on-state resistance while providing superior switching performance. It features an impressive maximum drain source voltage (Vds) of -20V, maximum drain current (Id) of -8A, and maximum operating temperature (Tj) of +150°C. This MOSFET is perfect for a broad range of applications, which include but are not limited to: DC Motor Controllers, Solenoid Controllers, Relay Drivers, DC-DC Converters, Switching Power Supplies, and Power Converters.
The fundamental working principle of the SIE836DF-T1-GE3 is based on the “Depletion-Mode” technology. This means that the drain current is turned on and off primarily by the gate-to-source voltage (VGS). The drain current is internally limited, and the device can be made to switch between conductive and non-conductive states by controlling the VGS. The main characteristics of the MOSFET are determined by its gate-to-source voltage, drain-to-source voltage and drain current. By manipulating these electrical characteristics, the device can be made to perform various functions.
The SIE836DF-T1-GE3 is widely used in various applications due to its excellent combination of performance, power and cost. It is ideal for applications where low on-state resistance and superior switching behavior is required. It can be used in DC Motor Controllers, Solenoid Controllers, Relay Drivers, DC-DC Converters, Switching Power Supplies and Power Converters. It is also commonly used in a variety of Consumer, Communication, Automotive and Industrial Electronics applications.
The SIE836DF-T1-GE3 is perfect for situations where a low-cost and reliable single 20V N-channel TrenchMOS Logic Level MOSFET is needed. It has impressive maximum drain source voltage, maximum drain current and maximum operating temperature, which makes it perfect for a wide variety of applications. This MOSFET operates on the “Depletion-Mode” principle and its output is determined by its gate-to-source voltage, drain-to-source voltage and drain current. It is widely used in various applications due to its excellent combination of performance, power and cost.
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SIE800DF-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A 10-PO... |
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SIE802DF-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A 10-PO... |
SIE864DF-T1-GE3 | Vishay Silic... | 0.63 $ | 1000 | MOSFET N-CH 30V 45A POLAR... |
SIE854DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 60A POLA... |
SIE874DF-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 60A POLAR... |
SIE836DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 18.3A PO... |
SIE808DF-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 60A 10-PO... |
SIE860DF-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 60A POLAR... |
SIE822DF-T1-GE3 | Vishay Silic... | 1.02 $ | 1000 | MOSFET N-CH 20V 50A POLAR... |
SIE820DF-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 50A 10-PO... |
SIE868DF-T1-GE3 | Vishay Silic... | 0.88 $ | 1000 | MOSFET N-CH 40V 60A POLAR... |
SIE810DF-T1-E3 | Vishay Silic... | 1.33 $ | 1000 | MOSFET N-CH 20V 60A 10-PO... |
SIE844DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 44.5A POL... |
SIE876DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 60A POLAR... |
SIE860DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 60A POLAR... |
SIE810DF-T1-GE3 | Vishay Silic... | 1.33 $ | 1000 | MOSFET N-CH 20V 60A POLAR... |
SIE862DF-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A POLAR... |
SIE812DF-T1-E3 | Vishay Silic... | 1.33 $ | 1000 | MOSFET N-CH 40V 60A 10-PO... |
SIE832DF-T1-GE3 | Vishay Silic... | 1.2 $ | 1000 | MOSFET N-CH 40V 50A 10-PO... |
SIE848DF-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A POLAR... |
SIE854DF-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 60A POLA... |
SIE806DF-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 60A 10-PO... |
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SIE812DF-T1-GE3 | Vishay Silic... | 1.33 $ | 1000 | MOSFET N-CH 40V 60A POLAR... |
SIE816DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 60A POLAR... |
SIE806DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 60A POLAR... |
SIE818DF-T1-E3 | Vishay Silic... | 1.52 $ | 1000 | MOSFET N-CH 75V 60A 10-PO... |
SIE830DF-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A 10-PO... |
SIE844DF-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 44.5A POL... |
SIE822DF-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 50A 10-PO... |
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