SIE836DF-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIE836DF-T1-GE3TR-ND

Manufacturer Part#:

SIE836DF-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 18.3A POLARPAK
More Detail: N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Sur...
DataSheet: SIE836DF-T1-GE3 datasheetSIE836DF-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: 10-PolarPAK® (SH)
Supplier Device Package: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SIE836DF-T1-GE3 is a powerful & reliable single 20V N-channel TrenchMOS Logic Level Field-Effect Transistor (MOSFET) which is specifically designed to minimize on-state resistance while providing superior switching performance. It features an impressive maximum drain source voltage (Vds) of -20V, maximum drain current (Id) of -8A, and maximum operating temperature (Tj) of +150°C. This MOSFET is perfect for a broad range of applications, which include but are not limited to: DC Motor Controllers, Solenoid Controllers, Relay Drivers, DC-DC Converters, Switching Power Supplies, and Power Converters.

The fundamental working principle of the SIE836DF-T1-GE3 is based on the “Depletion-Mode” technology. This means that the drain current is turned on and off primarily by the gate-to-source voltage (VGS). The drain current is internally limited, and the device can be made to switch between conductive and non-conductive states by controlling the VGS. The main characteristics of the MOSFET are determined by its gate-to-source voltage, drain-to-source voltage and drain current. By manipulating these electrical characteristics, the device can be made to perform various functions.

The SIE836DF-T1-GE3 is widely used in various applications due to its excellent combination of performance, power and cost. It is ideal for applications where low on-state resistance and superior switching behavior is required. It can be used in DC Motor Controllers, Solenoid Controllers, Relay Drivers, DC-DC Converters, Switching Power Supplies and Power Converters. It is also commonly used in a variety of Consumer, Communication, Automotive and Industrial Electronics applications.

The SIE836DF-T1-GE3 is perfect for situations where a low-cost and reliable single 20V N-channel TrenchMOS Logic Level MOSFET is needed. It has impressive maximum drain source voltage, maximum drain current and maximum operating temperature, which makes it perfect for a wide variety of applications. This MOSFET operates on the “Depletion-Mode” principle and its output is determined by its gate-to-source voltage, drain-to-source voltage and drain current. It is widely used in various applications due to its excellent combination of performance, power and cost.

The specific data is subject to PDF, and the above content is for reference

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