Allicdata Part #: | SIE806DF-T1-E3TR-ND |
Manufacturer Part#: |
SIE806DF-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 60A 10-POLARPAK |
More Detail: | N-Channel 30V 60A (Tc) 5.2W (Ta), 125W (Tc) Surfac... |
DataSheet: | SIE806DF-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 10-PolarPAK® (L) |
Supplier Device Package: | 10-PolarPAK® (L) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.2W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIE806DF-T1-E3 is a commonly used component in electronics systems and is one of the most common types of Field Effect Transistors (FETs). It is a single FET device and operates in a bipolar junction form by use of two channels of current flowing in opposite directions. The two channels are P-channel and N-channel. It is an enhancement-mode FET and its output is buffered in a resistor-capacitor network to supply a current source.
The SIE806DF-T1-E3 is primarily used for digital logic applications such as high-frequency switching and communications. It is also used in motor control circuits where it can be employed to limit the current through the motor, as well as in control applications that require wide voltage range. Its small size and high speed make it ideal for use in complex, high-speed applications.
The SIE806DF-T1-E3 works on the principle of field effect. This is a transistor mode where the electrical conductivity of the device is controlled by varying the voltage applied across it. A high voltage at the gate turns the device on, while a low voltage turns it off. It is inversely related to the voltage applied between the source and drain terminals, which are the two main terminals of the device.
The SIE806DF-T1-E3 is an N-channel FET and works in the enhancement mode. This mode allows the device to turn on when a positive voltage is applied to the gate. The biasing of the device is established by the voltage applied between the source and the drain, which is referred to as the gate voltage. When a positive voltage is applied between the source and the drain, the current flow from the drain to the source increases, thus allowing the device to turn off.
The SIE806DF-T1-E3 offers a high switching speed and is low noise, making it ideal for high-speed systems. It is also very reliable and can handle large voltage and current levels without degrading its performance. It is also relatively easy to use, as it requires only a few basic connections.
Overall, the SIE806DF-T1-E3 is a reliable, reliable and versatile FET that can be used in a variety of applications. Its small size and capability to handle high voltages and currents makes it an ideal choice for various digital logic and motor control applications. The device is also easy to use and requires only minimal wiring, making it a great choice for complex electronics systems and applications.
The specific data is subject to PDF, and the above content is for reference
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