SQJ401EP-T1_GE3

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The SQJ401EP-T1_GE3 is an N-channel enhancement mode Field Effect Transistor (FET) that is fabricated with an advanced PowerTrench process. It is designed for low voltage, high performance power switching applications. This FET is specifically optimized for short channel and low charge applications. It has a maximum drain-to-source on-state resistance of 6.5 mΩ and fast on-state switching. The SQJ401EP-T1_GE3 is mainly used in synchronous rectification, motor control, and low power analog output stages.

Features of the SQJ401EP-T1_GE3

The SQJ401EP-T1_GE3 has a number of features that make it well suited for use in power switching applications. These features include:

• Integrated Schottky diode
• Low R_DS(ON)
• Low gate charge
• Total gate charge (Qg) reduced by 30%, improving the overall system efficiency
• Tough oxide technology to enhance reliability
• Excellent thermal resistance

Working Principle of the SQJ401EP-T1_GE3

The SQJ401EP-T1_GE3 is an N-channel enhancement mode FET, which means that the FET operates in field effect mode when the gate-to-source voltage (VGS) is set to a negative voltage higher than the threshold voltage (Vth). When VGS is greater than Vth, the FET will be "on" and current will pass through the drain and source. The SQJ401EP-T1_GE3 is specifically optimized for short channel and low charge applications, which means it is able to reduce the total gate charge (Qg) by up to 30% when compared to other N-channel enhancement mode FETs.

Applications of the SQJ401EP-T1_GE3

The SQJ401EP-T1_GE3 is mainly used in synchronous rectification, motor control, and low power analog output stages. It can also be used in high frequency switching applications, such as switching power supplies, inverters, and PWM converters. In addition, the FET can be used in automotive applications, such as EGR, ECU, and motor control.

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