Allicdata Part #: | SQJ463EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ463EP-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 30A |
More Detail: | P-Channel 40V 30A (Tc) 83W (Tc) Surface Mount Powe... |
DataSheet: | SQJ463EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5875pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQJ463EP-T1_GE3 is a single-chip 8-pin Extremely Low Input Leakage, Structure MOSFET (ELS MOSFET) designed to be used in switching applications. This product combines very low input leakage current and low ON-resistance characteristics with a cost effective process and structure, making it well-suited for use in battery-powered applications. To ensure performance and optimize cost, the product is available in both standard and enhanced versions.
The application fields of the SQJ463EP-T1_GE3 include switching power circuits, especially circuits of the battery-powered type. Among its varied applications, there are integrated switch transistors, low-voltage memory cell circuits, high-current LDO applications, and gate line circuits.
The working principle of the SQJ463EP-T1_GE3 is as follows. First of all, when the gate voltage Vg is applied, an inverted channel region forms between the drain and the P+ region. This causes the current flowing from the drain to the source to increase, which leads to a decrease in Vth. When the drain current reaches a certain level, the device enters the saturation region, and the voltage drop between the drain and source decreases. As the gate voltage increases, the drain current continues to increase.
At the same time, the SQJ463EP-T1_GE3 also provides high-dielectric strength, low-current gate leakage, and low-threshold voltage, which makes it an optimal solution for energy-saving applications. Due to its superior performance, the device is particularly suitable for use in sectors such as consumer electronics, automotive, and communications.
In conclusion, the SQJ463EP-T1_GE3 is an 8-pin low-voltage MOSFET that combines low input leakage current, low-threshold voltage, and low-on-resistance characteristics, making it suitable for use in switching applications such as integrated switch transistors, low-voltage memory cell circuits, high-current LDO applications, and gate line circuits. It is also suited for being employed in battery-powered applications and energy-saving applications. The product is thus highly sought after in sectors like consumer electronics, automotive, and communications.
The specific data is subject to PDF, and the above content is for reference
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