Allicdata Part #: | SQJ488EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ488EP-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V POWERPAK SO8L |
More Detail: | N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount Pow... |
DataSheet: | SQJ488EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 979pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 7.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SQJ488EP-T1_GE3 is a special transistor with high electrical features and excellent thermal performance, which is widely used in the field of power electronic switching. In general, it is classified as among transistors, FETs and MOSFETs, single. It is suitable for a variety of applications, from precision analog circuits to high frequency digital board communication systems.The main function of SQJ488EP-T1_GE3 is to switch the electrical or thermal load of the system. It can be used as a low drop out (LDO) circuit, an inverting switch, a remote control switch, a low power DC-to-DC converter, and an amplifier. Additionally, SQJ488EP-T1_GE3 can be applied as a power amplifier, a voltage regulator, an overvoltage protection circuit, a power supply circuit, a voltage stabilizer, and an oscillator.
Unlike the regular transistors, FETs, and MOSFETs, the SQJ488EP-T1_GE3 has an advanced design and technology. It is composed of a vertical metal-oxide semiconductor (MOS) gate with a high transconductance, low gate-drain capacitance, and low input capacitance. This design contributes to high speed switching and improved reliability.
The operation princple of SQJ488EP-T1_GE3 is relatively simple. The gate voltage is applied to the input, and according to its value the switch is activated. When the gate voltage is high, the drain becomes strongly connected to the source, allowing current to flow through. Similarly, when the gate voltage is low, the drain becomes disconnected from the source and the current flow stops. As a result, the SQJ488EP-T1_GE3 becomes a toggle switch, turning on and off the current flow and allowing it to be controlled remotely.
One of the notable features of the SQJ488EP-T1_GE3 is its excellent thermal performance. It has a low thermal resistance that enables it to operate without significant thermal losses. Additionally, due to its low power dissipation and high temperature range, it is suitable for use in applications that need to maintain a safe operating temperature.
The SQJ488EP-T1_GE3’s ability to switch electrical and/or thermal loads with minimal power consumption make it an optimal choice for a wide range of applications. It can be used in low drop-out circuits, inverting switches, remote control devices, voltage regulators, overvoltage protection devices, power supplies, voltage stabilizers, and oscillators. It is particularly suited for applications that require high accuracy or high speed switching and for those with extreme environmental conditions.
In conclusion, the SQJ488EP-T1_GE3 is an ideal transistor for use in a wide range of electronic applications. Its electrical features and thermal performance enable it to operate reliably and with minimal power consumption. Its advanced design, along with its low gate capacitance and input capacitance, makes it useful for precision analog circuits and high frequency digital board communication systems. Additionally, its low thermal resistance and wide temperature range make it suitable for extreme environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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