SQJ416EP-T1_GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	30 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	27A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The SQJ416EP-T1_GE3 is an advanced type of power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single-gate field-effect transistor (FET) suitable for power switching and amplification applications. Its low-on resistance and operational capabilities make it an ideal choice for consumer and industrial applications.</p> <p>The Metal Oxide Semiconductor FET (MOSFET) is a transistor device that is made up of two or more insulated gate electrodes placed across a substrate consisting of either silicon oxide, silicon oxide-nitride, or other semiconductor material. A dielectric layer separates the substrate and the gate electrodes. The FET relies on voltage to achieve operation and is commonly used in amplifying or switching electrical signals.</p> <p>The SQJ416EP-T1_GE3 is a single-gate power MOSFET, meaning it has only one gate electrode. The gate electrode controls the voltage across the source and the drain when given a signal. This signal can be either a low-voltage (below 4.5 volts) or high-voltage (above 4.5 volts) pulse. Depending on the voltage, the device\'s operations are switched between a low-drain current (low signal) and a high-drain current (high signal) state. This type of device is well suited for applications that require fast switching times, low malfunction rates, and low power consumption.</p> <p>It is important to note that when using the SQJ416EP-T1_GE3, the power supply used should be of a lower voltage than the specified amplifier values. This will ensure that the device operates correctly without any issues.</p> <p>The SQJ416EP-T1_GE3 is a common choice for many applications, including power supplies, switches, amplifiers and other applications where current conduction, voltage control and voltage level detection need to be controlled. It is also suitable for use in automotive, medical, and audio-video systems. </p> <p>The wide range of applications for the SQJ416EP-T1_GE3 makes it an excellent choice for various applications. Its low-on resistance and high breakdown voltage make it an ideal choice for power switching and amplification applications. Its compact size and low-power consumption make it suitable for many applications where medium-level amplification and control are required.</p> <p>In conclusion, the SQJ416EP-T1_GE3 is a single-gate power MOSFET that offers low-on resistance and high breakdown voltage, making it an excellent choice for many power switching and amplification applications. It is also suitable for use in automotive, medical, and audio-video systems. Its features, including its small size, low-power consumption, and fast switching times make it an ideal choice for many applications.</p>

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