SQJ469EP-T1_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5100pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	155nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	25 mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SQJ469EP-T1_GE3 is a highly efficient and reliable transistor that can be used in a wide range of applications. This article will discuss its application fields and working principle. It will also explore how it can be used to enhance the performance of various types of circuits.

Application fields of SQJ469EP-T1_GE3

The SQJ469EP-T1_GE3 is a type of single N-channel field-effect transistor (FET) that is well suited for applications requiring high speed and high power. It is commonly used in amplifiers, modulators, audio frequency amplifiers, oscillators, power supplies, and voltage regulators. With its high input impedance, high gate insulation, and low drain-source ON resistance, the SQJ469EP-T1_GE3 is an ideal choice for medium- and high-power applications.The SQJ469EP-T1_GE3 is also suitable for applications where low heat dissipation and switching frequency are needed. It has a low gate-source capacitance which is ideal for use in radio frequency applications. Moreover, it is also well suited for high-gain power amplifiers and for driving big capacitive loads such as coils, relays, and motors.

Working principle of SQJ469EP-T1_GE3

The working principle of the SQJ469EP-T1_GE3 is based on the field-effect transistors (FET) technology. In this device, a very thin and transparent semiconductor material is used as the gate insulator, which is a single layer or multiple layers of metal sandwiched between two electrodes. The application of a voltage across the gate electrolyte can change the potential of the gate and cause inversion of a certain region of the channel, thereby controlling the current flow between the drain and the source.The SQJ469EP-T1_GE3 also has the ability to turn on and off the current flow between the drain and the source. When the gate voltage is below the threshold voltage, the FET is in the OFF state and no current can flow. When the gate voltage increases and reaches the threshold voltage, the FET changes to the saturated state and current can flow. This current is proportional to the gate-source voltage.

Conclusion

In conclusion, the SQJ469EP-T1_GE3 is a highly efficient and reliable transistor that can be used in a wide range of applications. Its application fields include amplifiers, modulators, audio frequency amplifiers, oscillators, power supplies, and voltage regulators. Furthermore, it also has a low gate-source capacitance which is ideal for use in radio frequency applications. Its working principle is based on the field-effect transistors technology. Therefore, the SQJ469EP-T1_GE3 is an ideal choice for various types of circuits.

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