Allicdata Part #: | SQJ446EP-T1_GE3-ND |
Manufacturer Part#: |
SQJ446EP-T1_GE3 |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 60A POWERPAKSO-8 |
More Detail: | N-Channel 40V 60A (Tc) 46W (Tc) Surface Mount Powe... |
DataSheet: | SQJ446EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.27995 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4220pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQJ446EP-T1_GE3 is a single high power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in a range of industrial, medical and consumer applications. This type of MOSFET is most commonly found in power supply applications, where it is used as a voltage switch or regulator to accurately control the delivery of an electric current. The SQJ446EP-T1_GE3 is also known as an N-Channel Enhancement Mode MOSFET, which has a larger area for charge to flow than other types of transistors.
The MOSFET is composed of a source, gate, and drain, and the three terminals are used to control the passage of electric current. The source terminal connects to the negative (ground) side of the power supply. When the gate voltage is higher than the source voltage, electric current is enabled, and when the gate voltage is lower than the source voltage, electric current is disabled. Therefore, the gate voltage can be used to accurately control the quantity of electric current.
The SQJ446EP-T1_GE3 is designed to handle up to 100V and 6A,making it ideal for a wide range of applications such as motor drivers, power inverters, and voltage regulators. It also offers high current handling capability, low gate capacitance, and low parasitic capacitance, making it suitable for high speed switching applications. This MOSFET is also capable of handling high frequency switching, and features a low on-resistance RDS(on) rating, which ensures that it is highly efficient when used in power applications.
The SQJ446EP-T1_GE3 is designed to be a cost effective solution, with a low static drain-source resistance (Rds(on)) and a low gate-charge (Qg) rating, meaning it can switch currents faster and with greater efficiency than other MOSFETs on the market. It is also designed to be highly reliable, with a low power rating and high maximum drain-source voltage.
The SQJ446EP-T1_GE3 can be used in a variety of applications, from consumer electronics to industrial applications. It is typically used in power supply applications where it is required to accurately regulate the delivery of an electric current. It can also be used as a voltage switch or regulator in motor controllers, HVAC systems and robotics, as well as in high speed switching applications in telecommunications and computing.
The SQJ446EP-T1_GE3 is a powerful and reliable single MOSFET that offers a cost-effective solution for a wide range of applications. It provides a low static drain-source resistance and a low gate-charge rating, making it suitable for high speed switching applications, and its high current handling capability and low parasitic capacitance make it ideal for power supply applications. It is highly reliable, with a low power rating and high maximum drain-source voltage, making it suitable for use in a variety of industrial, medical, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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