SQJ446EP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJ446EP-T1_GE3-ND

Manufacturer Part#:

SQJ446EP-T1_GE3

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 60A POWERPAKSO-8
More Detail: N-Channel 40V 60A (Tc) 46W (Tc) Surface Mount Powe...
DataSheet: SQJ446EP-T1_GE3 datasheetSQJ446EP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.27995
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4220pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQJ446EP-T1_GE3 is a single high power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in a range of industrial, medical and consumer applications. This type of MOSFET is most commonly found in power supply applications, where it is used as a voltage switch or regulator to accurately control the delivery of an electric current. The SQJ446EP-T1_GE3 is also known as an N-Channel Enhancement Mode MOSFET, which has a larger area for charge to flow than other types of transistors.

The MOSFET is composed of a source, gate, and drain, and the three terminals are used to control the passage of electric current. The source terminal connects to the negative (ground) side of the power supply. When the gate voltage is higher than the source voltage, electric current is enabled, and when the gate voltage is lower than the source voltage, electric current is disabled. Therefore, the gate voltage can be used to accurately control the quantity of electric current.

The SQJ446EP-T1_GE3 is designed to handle up to 100V and 6A,making it ideal for a wide range of applications such as motor drivers, power inverters, and voltage regulators. It also offers high current handling capability, low gate capacitance, and low parasitic capacitance, making it suitable for high speed switching applications. This MOSFET is also capable of handling high frequency switching, and features a low on-resistance RDS(on) rating, which ensures that it is highly efficient when used in power applications.

The SQJ446EP-T1_GE3 is designed to be a cost effective solution, with a low static drain-source resistance (Rds(on)) and a low gate-charge (Qg) rating, meaning it can switch currents faster and with greater efficiency than other MOSFETs on the market. It is also designed to be highly reliable, with a low power rating and high maximum drain-source voltage.

The SQJ446EP-T1_GE3 can be used in a variety of applications, from consumer electronics to industrial applications. It is typically used in power supply applications where it is required to accurately regulate the delivery of an electric current. It can also be used as a voltage switch or regulator in motor controllers, HVAC systems and robotics, as well as in high speed switching applications in telecommunications and computing.

The SQJ446EP-T1_GE3 is a powerful and reliable single MOSFET that offers a cost-effective solution for a wide range of applications. It provides a low static drain-source resistance and a low gate-charge rating, making it suitable for high speed switching applications, and its high current handling capability and low parasitic capacitance make it ideal for power supply applications. It is highly reliable, with a low power rating and high maximum drain-source voltage, making it suitable for use in a variety of industrial, medical, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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