Allicdata Part #: | SQJ407EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ407EP-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 60A POWERPAKSO-8 |
More Detail: | P-Channel 30V 60A (Tc) 68W (Tc) Surface Mount Powe... |
DataSheet: | SQJ407EP-T1_GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SQJ407EP-T1_GE3 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). As a type of transistor, it has a wide range of applications and can essentially be used to aid in switching and amplifying electricity. The SQJ407EP-T1_GE3 works when an input voltage is applied to a gate terminal that is then connected to a source terminal. This triggers the MOSFET to open, voltage across the drain and source terminals increases, and the current can flow.
As a N-channel MOSFET, SQJ407EP-T1_GE3 has many features that make it a popular choice among electronic designers, especially when switching/amplifying low-power signals. SQJ407EP-T1_GE3 is also a highly flexible transistor with a wide range of operating voltages and currents, making it suitable for a variety of situations. In addition, the SQJ407EP-T1_GE3 has a very high speed. It can be operated up to 10kHz with a voltage between 2.5-7V.
The SQJ407EP-T1_GE3 is an effective choice for many applications. It can be used in audio amplifiers since it has low on-resistance, thus allowing for better sound fidelity. It is also commonly used for power management applications, as it is able to switch and amplify power supply efficiently. It is also used as a switch in motor control circuits, as it allows for smooth operation. The SQJ407EP-T1_GE3 is also used in gate drive circuits, where it amplifies the gate signal of power MOSFETs and IGBTs, thus increasing the efficiency of the circuits.
As powerful and versatile as the SQJ407EP-T1_GE3 is, it can still suffer from potential reliability issues. As with any electrical component, the SQJ407EP-T1_GE3 can be prone to hot-spot damage especially when exposed to too much heat. To prevent this, it is important to have proper thermal management in place. Furthermore, due to its high speed, the SQJ407EP-T1_GE3 can cause EMI (electromagnetic interference); therefore designers must ensure that appropriate components and shielding techniques are used to ensure that any EMI radiation is suppressed.
In summary, the SQJ407EP-T1_GE3 is a highly advantageous and flexible N-channel MOSFET with a wide range of applications. It is able to switch and amplify low-power signals quickly, efficiently, and with excellent sound fidelity. As with any electrical component, however, it is important to consider any potential reliability issues and to implement proper safeguards to prevent damage and interference.
The specific data is subject to PDF, and the above content is for reference
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