SQJ418EP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJ418EP-T1_GE3TR-ND

Manufacturer Part#:

SQJ418EP-T1_GE3

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 48A POWERPAKSO
More Detail: N-Channel 100V 48A (Tc) 68W (Tc) Surface Mount Pow...
DataSheet: SQJ418EP-T1_GE3 datasheetSQJ418EP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.28603
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQJ418EP-T1_GE3 transistor is a sophisticated and versatile device. It is an enhancement-mode, N-channel, Silicon-on-Insulator (SOI) power MOSFET. This transistor is designed to provide the highest performance and cost-effectiveness for a wide range of applications.

The SQJ418EP-T1_GE3 is optimized for use in many applications, such as notebook and tablet power management, high-speed/Ethernet switches, power amplifiers, and automotive and industrial power supplies. This device can also be used in high-frequency switching applications, like wireless local area networks (WLANs), base station transceivers, and other communications systems.

This transistor has a very low internal gate charge for fast switching speeds and excellent low on-resistance for high-current performance. It also has low output capacitance, which is beneficial for high-frequency switching applications. The integrated thermal shutdown protection circuit of this device will ensure that the temperature does not exceed a certain limit. The SQJ418EP-T1_GE3 transistor is also designed to minimize electrical noise.

The operating principle of the SQJ418EP-T1_GE3 is based on the following components: Source, Gate, and Drain. The source is connected to ground and the drain is connected to a power supply. The current flow between the source and drain is controlled by the voltage difference between the gate and the source. When the voltage applied to the gate is below the threshold voltage, the device is turned off and the drain-source current is zero. When the gate voltage is greater than the threshold voltage, the device is turned on and current flows from the source to the drain. The current flow is proportional to the applied gate voltage.

In conclusion, the SQJ418EP-T1_GE3 is a very advanced transistor that has a wide range of applications. It provides excellent performance, low switching speed and good noise immunity. This device offers very good value for money and is perfect for applications in the automotive, industrial, and communications fields.

The specific data is subject to PDF, and the above content is for reference

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