SQJ423EP-T1_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	14 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SQJ423EP-T1_GE3 is a type of single-gate Field Effect Transistor (FET). It is commonly used in circuits that require high voltage and low reactance, such as switching, modulating, and protection applications. As a voltage-controllable device, the SQJ423EP-T1_GE3 can be used to control the current flow in a circuit by adjusting the voltage applied to its gates.The main principle behind the operation of the SQJ423EP-T1_GE3 is the effect of electric fields upon a conducting channel. When a voltage is applied at its gates, the SQJ423EP-T1_GE3 generates an electric field. This electric field affects the behavior of the free electrons within the semiconductor material that forms the conducting channel of the FET, causing it to widen or narrow and allowing more or less current to flow through it. The SQJ423EP-T1_GE3 has a wide range of uses in a variety of fields. It is particularly useful in industrial and automotive applications, due to its high voltage and low reactance. In the industrial sector, it can be used for motor control, data conversion, power regulation, and power factor control. In the automotive sector, the SQJ423EP-T1_GE3 may be used for ignition, engine control, powertrain control, and emission control. The SQJ423EP-T1_GE3 has several advantages over other FETs and MOSFETS. It has a low “on” resistance, meaning it provides a higher level of efficiency than comparable FETs. Its high current-handling capacity and low power consumption make it suitable for use in high-power applications. Due to its voltage-controlled design, the SQJ423EP-T1_GE3 is also incredibly easy to set up and use. Like all FETs, the SQJ423EP-T1_GE3 must be connected correctly and given sufficient power in order to function effectively. When connecting the component, the source pin should be linked to the most negative potential in the circuit, while the drain and gate pins should be connected to the most positive potential in the circuit. When providing power to the component, the voltage to the gate should never exceed the voltage to the drain, or else the component could become damaged.Overall, the SQJ423EP-T1_GE3 is a versatile and reliable component that provides a high level of efficiency and performance. Its wide range of applications and ease of use make it an attractive option for a wide variety of projects. By following the correct connection techniques and ensuring sufficient power, the SQJ423EP-T1_GE3 can be an invaluable component for a variety of projects.

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