SQJ414EP-T1_GE3

The SQJ414EP-T1_GE3 is a transistor of the field-effect family (FET). It is a type of single-gate MOSFET, meaning it consists of a single gate with a source, drain and channel. This type of transistor is suitable for more advanced power applications in the range of 70 volts. It can sustain higher voltage levels thanks to its advanced design and can be used for amplifying power signals.

Features and Specifications

The SQJ414EP-T1_GE3 comes with a variety of features and specifications, including:

• Drain-Source Voltage (VDS): 70V
• Gate-Source Voltage (VGS): ±20V
• On-Resistance(RDS(on)): 0.039Ω
• Junction to junction temperature: +150°C

These are just some of the features and specifications that make the SQJ414EP-T1_GE3 a powerful transistor.

Application Field and Working Principle

The SQJ414EP-T1_GE3 can be used for a variety of high voltage power applications, such as amplifying high voltage power signals, reversing motor direction, and control of other high voltage applications. It is also ideal for industrial, automotive and general purpose use. As a single-gate MOSFET, it has the advantage of operating as a charge amplifier, meaning that the gate voltage controls the current flow through the transistor.

The SQJ414EP-T1_GE3 uses three terminals - the gate, the source and the drain. The gate is the control element, and when a positive voltage is applied to the gate, this creates an electric field between the source and drain. As current flows through the transistor, a voltage drop takes place across the source-drain junction, and this is known as the source-drain resistance (RDS). The higher the RDS, the higher the amount of current that can pass through the transistor. When the gate voltage is reversed, the electric field created is reversed, preventing current from passing through the transistor.

The SQJ414EP-T1_GE3 offers a variety of features, including high voltage capability, a low RDS and junction to junction temperature. The high voltage capability ensures that the transistor can operate without any damage or degradation at higher voltages, while the low RDS allows it to handle larger current levels without overheating. Additionally, the junction to junction temperature allows it to handle current loads even at higher temperatures.

Conclusion

The SQJ414EP-T1_GE3 is a powerful, single-gate MOSFET. Its high voltage capability, low RDS and junction to junction temperature make it suitable for a wide variety of high voltage power applications, from amplifying high voltage power signals to controlling other high voltage applications. With its superior features and specifications, it is easy to see why the SQJ414EP-T1_GE3 is so popular among engineers and technicians.