SQJ422EP-T1_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQJ422EP-T1_GE3 is a single N-Channel Partially Depleted Silicon-On-Insulator (PD-SOI) MOSFET. It is a type of insulated-gate field-effect transistor (MOSFET) that integrates a source and a drain inside an electrically isolated silicon substrate. This type of transistor has been gaining wide applications due to its low power consumption and ease of use. It is used in various embedded systems and mobile devices for power management and switching applications.

The SQJ422EP-T1_GE3 MOSFET comprises of a fully depleted SOI layer between the source and drain and a partially-depleted body layer. This layer structure enables it to switch faster as compared to other MOSFETs while using less power. It is capable of operating at up to 25V and has a minimum channel width of 50nm. This makes the device ideal for low-voltage switching applications and circuits with low power consumption requirements.

The working principle of the SQJ422EP-T1_GE3 is based on the concept of field-effect conduction. The most basic operation of the device involves creating a low resistance conductive channel between the source and the drain, which can be achieved by applying a gate voltage. When the gate voltage is above a certain threshold, the channel is created and the device becomes conductive. The resistance of the channel can be controlled by either increasing or decreasing the gate voltage, which enables the device to be used as a switch or a linear amplifier.

The SQJ422EP-T1_GE3 is primarily used in power management and switching applications such as DC-DC converters, voltage-level translators, and power supply controllers. It is also used in low-power audio amplifiers and switching applications. Due to its low noise and power consumption, this device has become popular for applications in smart phones, wearables, home automation, and the Internet of Things (IoT).

In conclusion, the SQJ422EP-T1_GE3 is a single N-Channel PD-SOI MOSFET with a minimum channel width of 50nm and low power consumption capabilities. It is commonly used for power management and switching applications in various embedded systems, mobile devices, and low-power audio amplifiers. Its working principle is based on the concept of field-effect conduction and its resistance is controlled by varying the gate voltage. This makes the device highly versatile for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference