SQJ431AEP-T1_GE3

The SQJ431AEP-T1_GE3 is a P-channel enhancement mode field-effect transistor (FET) that employs advanced cell design and a self-aligned process to achieve high levels of performance, power savings and low on-state resistance (RDS(on)). It is suitable for high current switching and low level signal applications.

The SQJ431AEP-T1_GE3 operates with an input voltage range from 4.5V to 30V, a maximum RDS(on) of 0.033Ω and a maximum current of 15A. It features a fast switching time of 8.7ns, a low output capacitance of 4.4pF, and a low gate charge of 0.028μC.

Application Areas

The SQJ431AEP-T1_GE3 can be used in a wide range of power management and control applications, including DC-DC converters, AC-DC rectification, solar devices, high-frequency circuits, load switching and motor control systems. Due to its low on-state resistance and high current capabilities, it is suitable for high-performance applications such as switching power supplies, synchronous rectification, pulse-width modulation (PWM) and variable-frequency inverters.

Working Principle

The SQJ431AEP-T1_GE3 is a typical field-effect transistor (FET) with a gate, a source, and a drain. The device features an enhancement-mode, which means that when a suitable voltage is applied to the gate and it exceeds the threshold voltage (Vth) of the device, a channel is formed between the source and the drain terminals, allowing current to flow. The width of the channel determined by the gate voltage (Vg) and the channel resistance determined by the drain-source voltage (Vds). As the gate voltage increases, the channel width increases and the drain-source resistance decreases. By adjusting the gate voltage, the device can be used to control the current flow in the circuit.

In addition to its channel control capabilities, the SQJ431AEP-T1_GE3 also offers an industry-leading combination of low on-state resistance and fast switching time. Its low on-state resistance allows for high efficiency when operating at high currents, while its fast switching time enables higher switching frequencies and more efficient power conversion.

The SQJ431AEP-T1_GE3 is available in a TO-260AB package and provided in a range of current ratings from 2A to 15A.

Conclusion

The SQJ431AEP-T1_GE3 is an advanced P-channel enhancement-mode FET that is suitable for high current switching and low level signal applications. It offers a maximum drain-source resistance of 0.033Ω and a maximum current rating of 15A, and features a fast switching time of 8.7ns and a low gate charge of 0.028μC. With its high performance and power savings, the SQJ431AEP-T1_GE3 is ideal for a wide range of power management and control applications.