Allicdata Part #: | SQJ415EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ415EP-T1_GE3 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHAN 40V POWERPAK SO-8L |
More Detail: | P-Channel 40V 30A (Tc) 45W (Tc) Surface Mount Powe... |
DataSheet: | SQJ415EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.25087 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQJ415EP-T1_GE3 is part of a range of transistors from the SQJ3 series. It is a single N-Channel Enhancement MOSFET that has the ability to provide high performance power switching for applications up to 10A. This device is an effective solution for applications requiring fast switching, low saturation voltage and low on-resistance.
The SQJ415EP-T1_GE3 is a heavily-doped device with small W/L and low Drain-to-Source on-resistance that can be used to quickly switch on and off small loads. Furthermore, the device is equipped with a Source-Down body structure ideal for use in applications requiring low-inductance and efficient cooling. This provides high performance at low voltage, like in the case of switching DC-DC converters.
The SQJ415EP-T1_GE3 can be used in a number of different applications. It is useful for switching DC-DC converters, motor drivers, and motor drive systems. The low on-resistance and tight thermal control of this device make it ideal for these applications. The fast switching speed is also beneficial in these applications, as it can help to reduce EMI, extend the life of motors, and ensure that they are driven efficiently.
The SQJ415EP-T1_GE3 works by using the source-down body structure. This structure places the source and gate electrodes below the body of the device, giving it a lower level of inductance than traditional MOSFETs. This in turn allows it to switch much faster, reducing the power losses associated with switching. The source-down structure also provides improved heat transfer, reducing the thermal resistance and allowing the device to handle higher currents.
The SQJ415EP-T1_GE3 also features a high Drain-to-Source breakdown voltage, making it suitable for a range of operating voltages. As it can be used safely in a number of different voltages, it makes it especially useful in applications where voltage is not fixed, such as in automotive, industrial, and medical applications. This ensures that it can be used in a wide range of applications, offering excellent performance for whatever task it is set.
The SQJ415EP-T1_GE3 is easy to use and offer excellent performance and reliability. Its fast switching speed and low Drain-to-Source on-resistance make it ideal for a range of power-switching applications. Its high breakdown voltage and efficient heat transfer make it suitable for a number of different operating voltages. This makes it an ideal choice for those looking for a reliable, high performance, and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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