Allicdata Part #: | SQJ486EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ486EP-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 75V POWERPAK SO8L |
More Detail: | N-Channel 75V 30A (Tc) 56W (Tc) Surface Mount Powe... |
DataSheet: | SQJ486EP-T1_GE3 Datasheet/PDF |
Quantity: | 9000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1386pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 51A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQJ486EP-T1_GE3 is a field-effect transistors (FET) designed primarily to provide an efficient, low-cost power switch for a wide range of electronic applications. It consists of a channel, a source region, a drain region, and a gate. It is one type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically the single version.
In operation, this FET is like a switch controlling the flow of current from the source to the drain. When the voltage applied to the gate is high, it overwhelms the resistance to current flow, allowing it to pass from the source to the drain. When this voltage is lowered, the resistance to current flow increases, thus greatly reducing the amount of current passing from the source to the drain. This makes it ideal for a wide range of electronic applications such as motor control, solenoid control, motor speed control, switching power supplies, and many other applications.
The SQJ486EP-T1_GE3 is designed with an innovative, low-cost vertical structure. This allows it to provide efficient, low-cost operation. It is designed to provide low on-resistance and gate charge, enabling high-current switching and outstanding performance. It also provides a low thermal profile and excellent heat dissipation, allowing it to operate at high temperatures without experiencing high losses in performance. It also has robust ESD tolerance, making it resistant to potential device damage from electrostatic discharge.
The SQJ486EP-T1_GE3 is also designed with a multi-layer, high-resistance, thick gate dielectric, allowing it to be used in high current switching applications. It is also very reliable, requiring little or no maintenance over time. It is also compatible with a wide range of gate drivers, ensuring that it can be used in a wide range of applications.
In conclusion, the SQJ486EP-T1_GE3 is a highly efficient, low-cost MOSFET designed specifically to provide an efficient, low-cost power switch for a wide range of electronic applications. It is designed with a vertical structure, providing efficient, low-cost operation. It also provides excellent heat dissipation, robust ESD tolerance, and high current switching. It is also very reliable and compatible with a wide range of gate drivers. All these features make it ideal for a wide range of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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SQJ486EP-T1_GE3 | Vishay Silic... | -- | 9000 | MOSFET N-CH 75V POWERPAK ... |
SQJ443EP-T1_GE3 | Vishay Silic... | 0.37 $ | 9000 | MOSFET P-CH 40V 40A POWER... |
SQJ422EP-T1_GE3 | Vishay Silic... | 0.5 $ | 1000 | MOSFET N-CH 40V 75A PPAK ... |
SQJ461EP-T1_GE3 | Vishay Silic... | 1.02 $ | 1000 | MOSFET P-CH 60V 30AP-Chan... |
SQJ463EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 30AP-Chan... |
SQJ403BEEP-T1_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET P-CH 30V 30A POWER... |
SQJ412EP-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET N-CH 40V 32A PPAK ... |
SQJ407EP-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 30V 60A POWER... |
SQJ414EP-T1_GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET N-CH 30V 30A POWER... |
SQJ420EP-T1_GE3 | Vishay Silic... | 0.25 $ | 1000 | MOSFET N-CH 40V 30A POWER... |
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SQJ416EP-T1_GE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET N-CH 100V 27A POWE... |
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SQJ464EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 32A POWER... |
SQJ418EP-T1_GE3 | Vishay Silic... | 0.32 $ | 1000 | MOSFET N-CH 100V 48A POWE... |
SQJ446EP-T1_GE3 | Vishay Silic... | 0.3 $ | 1000 | MOSFET N-CH 40V 60A POWER... |
SQJ476EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 23A POWE... |
SQJ459EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 52A POWER... |
SQJ454EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 13A POWE... |
SQJ479EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 32A POWER... |
SQJ444EP-T1_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET N-CH 40V 60A POWER... |
SQJ411EP-T1_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET P-CH 12V 60A POWER... |
SQJ465EP-T1_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET P-CH 60V 8A POWERP... |
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