Allicdata Part #: | SQJ402EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ402EP-T1_GE3 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V POWERPAK SO8L |
More Detail: | N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount Pow... |
DataSheet: | SQJ402EP-T1_GE3 Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.42601 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2289pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQJ402EP-T1_GE3 is a Static Induction silicon transistor that maintains switching characteristics and high frequency operation features. The transistor provides high speed switching, high gain, low on-resistance and wide bandwidth performance. It operates over a wide temperature range and is suitable for various, high-temperature, low-recovery operation. It is widely used in various applications such as TV transmission, medical and industrial imaging, communication, motor drives, and motor control.
The main features of this transistor include its high breakdown voltage and low on-resistance. This makes it suitable for a wide range of operations that require precise switching, such as in power converters, high-density integrated circuits, and high-speed switching operations. With its high speed switching, it is also suitable for applications that require high frequency operation. The transistor can withstand a high continuous current and a wide operating temperature range.
The SQJ402EP-T1_GE3 is an enhancement-mode metal-oxide-silicon field-effect transistor (MOSFET). In this type of transistor, the gate is insulated from the substrate with an oxide layer. The oxide layer leads to a positive voltage applied to the gate. This makes it possible for the drain current to be controlled by the voltage applied to the gate. This makes the transistor ideal for switching applications where it is necessary to control the drain current without any leakage current. The transistor is also suitable for use in high frequency operation.
The work principle of the SQJ402EP-T1_GE3 is based on the physical structure of the MOSFET. The gate is typically connected to the source and is insulated from the substrate using an oxide layer. A positive gate voltage creates an electric field that is strong enough to prevent the electrons from flowing through the channel. The electric field is created by an electrical charge at the gate. When the positive gate voltage is removed, the electric field disappears and the electrons can once again flow freely through the channel.
The application field of the SQJ402EP-T1_GE3 include motor control, medical imaging, motor drives, TV transmission, power converters and high-speed switching operations. The transistor is suitable for both low and high frequency operation and have a high breakdown voltage and low on-resistance. It is also used in integrated circuits and other electronics devices where precise switching is required.
In conclusion, the SQJ402EP-T1_GE3 is a high-performance Static Induction Silicon transistor that offers a wide range of applications and is suitable for both high and low frequency operation. It has a high breakdown voltage and low on-resistance, making it ideal for use in various applications such as motor control, imaging, power converters, and high-frequency switching. It is also suitable for use in high-density integrated circuits and other electronics devices that require precise switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQJ401EP-T1_GE3 | Vishay Silic... | 0.64 $ | 1000 | MOSFET P-CH 12V 32A POWER... |
SQJ456EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 32A PPAK... |
SQJ415EP-T1_GE3 | Vishay Silic... | 0.28 $ | 1000 | MOSFET P-CHAN 40V POWERPA... |
SQJ481EP-T1_GE3 | Vishay Silic... | 0.28 $ | 1000 | MOSFET P-CHAN 80V POWERPA... |
SQJ431AEP-T1_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET P-CHAN 200VP-Chann... |
SQJ486EP-T1_GE3 | Vishay Silic... | -- | 9000 | MOSFET N-CH 75V POWERPAK ... |
SQJ443EP-T1_GE3 | Vishay Silic... | 0.37 $ | 9000 | MOSFET P-CH 40V 40A POWER... |
SQJ422EP-T1_GE3 | Vishay Silic... | 0.5 $ | 1000 | MOSFET N-CH 40V 75A PPAK ... |
SQJ461EP-T1_GE3 | Vishay Silic... | 1.02 $ | 1000 | MOSFET P-CH 60V 30AP-Chan... |
SQJ463EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 30AP-Chan... |
SQJ403BEEP-T1_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET P-CH 30V 30A POWER... |
SQJ412EP-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET N-CH 40V 32A PPAK ... |
SQJ407EP-T1_GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 30V 60A POWER... |
SQJ414EP-T1_GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET N-CH 30V 30A POWER... |
SQJ420EP-T1_GE3 | Vishay Silic... | 0.25 $ | 1000 | MOSFET N-CH 40V 30A POWER... |
SQJ457EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 36A POWER... |
SQJ416EP-T1_GE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET N-CH 100V 27A POWE... |
SQJ474EP-T1_GE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET N-CH 100V 26A POWE... |
SQJ464EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 32A POWER... |
SQJ418EP-T1_GE3 | Vishay Silic... | 0.32 $ | 1000 | MOSFET N-CH 100V 48A POWE... |
SQJ446EP-T1_GE3 | Vishay Silic... | 0.3 $ | 1000 | MOSFET N-CH 40V 60A POWER... |
SQJ476EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 23A POWE... |
SQJ459EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 52A POWER... |
SQJ454EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 13A POWE... |
SQJ479EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 32A POWER... |
SQJ444EP-T1_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET N-CH 40V 60A POWER... |
SQJ411EP-T1_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET P-CH 12V 60A POWER... |
SQJ465EP-T1_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET P-CH 60V 8A POWERP... |
SQJ409EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 60A POWER... |
SQJ433EP-T1_GE3 | Vishay Silic... | 0.37 $ | 1000 | MOSFET P-CH 30V 75A POWER... |
SQJ460AEP-T1_GE3 | Vishay Silic... | 0.44 $ | 1000 | MOSFET N-CH 60V 32A PPAK ... |
SQJ403EP-T1_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET P-CH 30V 30A POWER... |
SQJ402EP-T1_GE3 | Vishay Silic... | 0.48 $ | 12000 | MOSFET N-CH 100V POWERPAK... |
SQJ488EP-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V POWERPAK... |
SQJ431EP-T1_GE3 | Vishay Silic... | 0.62 $ | 1000 | MOSFET P-CHAN 200V SO8LP-... |
SQJ469EP-T1_GE3 | Vishay Silic... | -- | 39000 | MOSFET P-CH 80V 32A PPAK ... |
SQJ423EP-T1_GE3 | Vishay Silic... | 0.33 $ | 3000 | MOSFET P-CH 40V 55A POWER... |
SQJ410EP-T1_GE3 | Vishay Silic... | 0.78 $ | 1000 | MOSFET N-CH 30V 32A POWER... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...