SQJ460AEP-T1_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQJ460AEP-T1_GE3 is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is specifically designed for use in many different kinds of applications. It is an ideal choice for circuit designers who are looking for an efficient, cost-effective transistor that can provide long-lasting performance. The SQJ460AEP-T1_GE3 has the following features and specifications:

• Maximum Drain Source Voltage – 60V

• Maximum Drain Current – 18A

• Gate Source Voltage – ±20V

• Threshold Voltage – 1.9V

• Power Dissipation – 108W

• Input Capacitance – 800pF

• Operating Temperature – -55°C to +85°C

The SQJ460AEP-T1_GE3’s modern design means that it is suitable for a wide range of applications. These include direct current (DC) and alternating current (AC) power supplies, motor drives, AC/DC motor control, electronic measuring equipment, and motor speed control circuits. The SQJ460AEP-T1_GE3 can also be used in many applications that require high-efficiency power control, and can easily be integrated with automated systems or microcontrollers.

Due to its high gate-source voltage and input capacitance, the SQJ460AEP-T1_GE3 increases switching speed and efficiency when used in applications such as inverter circuits, DC-DC and AC-DC converters. The power dissipation of the SQJ460AEP-T1_GE3 is up to 108W, making it an excellent choice for high-power, high-voltage applications.

As with all semiconductor devices, the SQJ460AEP-T1_GE3\'s working principle is based on the effect of the electric field on the flow of electrons and holes. This effect is what gives the MOSFET its ability to change current and voltage levels at relatively low frequencies. In an N-Channel MOSFET, the electric field is created by a gate voltage, and an inversion layer of charge carriers forms between the gate and the substrate. When the gate voltage is below the threshold voltage, the channel is “off” and current flow is blocked. When the gate voltage is above the threshold voltage, the channel is “on” and current flow is permitted.

In conclusion, the SQJ460AEP-T1_GE3 is an excellent choice for customers who need efficient, high-quality power control. The device\'s wide operating temperature range, high drain current and gate source voltages, and robust power dissipation make it suitable for a variety of applications. The SQJ460AEP-T1_GE3\'s working principle allows it to efficiently regulate and control current and voltage levels with minimal power loss. With all these features, the SQJ460AEP-T1_GE3 offers outstanding performance for your circuit design.

The specific data is subject to PDF, and the above content is for reference