SSM3K116TU,LF Discrete Semiconductor Products |
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Allicdata Part #: | SSM3K116TULFTR-ND |
Manufacturer Part#: |
SSM3K116TU,LF |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 2.2A UFM |
More Detail: | N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount U... |
DataSheet: | SSM3K116TU,LF Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.10520 |
Vgs(th) (Max) @ Id: | 1.1V @ 100µA |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | UFM |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 245pF @ 10V |
Vgs (Max): | ±12V |
Series: | U-MOSIII |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM3K116TU is a single-gate N-channel enhancement-type Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with a maximum drain current of 4 Amperes and a drain-source voltage of 40 Volts. It is capable of handling large currents and voltages, making it suitable for applications such as power management and control, voltage regulation, switching and amplification circuits. This device has a low threshold voltage, allowing it to be used in low-power circuits. It also features fast switching speeds and low capacitance, allowing it to be used in high-speed applications.
The SSM3K116TU MOSFET is commonly used in power management applications, where it is used to control the flow of current into and out of circuits by using a gate voltage. The device can also be used to amplify signals, because increasing the gate voltage can increase the output current.
In operation, the SSM3K116TU MOSFET works by having a gate input which supplies a voltage to the gate in order to control the flow of current across the MOSFET\'s drain and source terminals. When the gate voltage is low, the MOSFET is in its Cut-Off region and no current flows through the device. When the gate voltage is increased, the MOSFET enters its saturation region and drains current from the source terminal and delivers it to the drain terminal. The amount of current is proportional to the gate voltage applied.
The SSM3K116TU can be used in a wide range of applications due to its features. It can be used in power management circuits, voltage regulation circuits, switching circuits, and amplification and signal processing circuits. For example, in power management applications, the device can be used as a switch to control the flow of current in a circuit. In voltage regulation circuits, the device can be used to provide an adjustable voltage output by controlling the amount of current in the circuit. In switching circuits, the device can be used to quickly switch current in the circuit. In amplification and signal processing circuits, the device can be used to amplify or adjust the level of a signal.
The SSM3K116TU MOSFET is an excellent device for power management, voltage regulation, switching, and amplification applications. It is designed for high-speed operation, with a low capacitance, which allows for fast switching times. The low threshold voltage allows for low-power operation and the high drain current allows for current handling. All these features combined make the SSM3K116TU MOSFET a great choice for applications that require power management, voltage regulation, switching, and amplification.
The specific data is subject to PDF, and the above content is for reference
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