SSM6L09FUTE85LF Allicdata Electronics
Allicdata Part #:

SSM6L09FUTE85LFTR-ND

Manufacturer Part#:

SSM6L09FUTE85LF

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N/P-CH 30V 0.4A/0.2A US6
More Detail: Mosfet Array N and P-Channel 30V 400mA, 200mA 300m...
DataSheet: SSM6L09FUTE85LF datasheetSSM6L09FUTE85LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06521
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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SSM6L09FUTE85LF is a surface-mountable power MOSFET array device designed for a wide range of applications in automotive, industrial and telecom systems. The SSM6L09FUTE85LF power MOSFET array consists of two low-side N-channel enhancement-mode MOSFETs, one high-side N-channel enhancement-mode MOSFET and one schottky diode. The low-side transistors are used to implement low-side switches, while the high-side transistor is used to implement a high-side switch. The schottky diode provides protection for the MOSFETs when the device is switched off.

The SSM6L09FUTE85LF is a good choice for applications requiring high current control or power switching such as in automotive, industrial and telecom systems. It has a maximum current rating of 110A, a maximum operating voltage of 25V and a maximum on-state resistance of 0.31Ω. It also features high-voltage operation and a wide operating temperature range from -55 to +150°C. The device is also RoHS compatible, making it suitable for industrial and telecom applications.

The SSM6L09FUTE85LF works by using a combination of N-channel and Schottky diode technologies to provide efficient current control. When a voltage is applied to the gate pin of the device, the N-channel MOSFETs conduct current between the drain and source. The Schottky diode provides a reverse current path when the MOSFETs are not conducting. This also helps to reduce power loss and provides protection when the device is switched off.

In addition to its current control, the SSM6L09FUTE85LF also offers voltage-level translation. This helps to improve efficiency and reduce power loss in applications that require voltage translation, such as data and server applications. The device is able to convert logic levels from 0V to 5V to logic levels from 0V to 18V. This helps to provide effective voltage-level conversion and can also be used to interface with different voltages in automotive, industrial, and telecom systems.

The SSM6L09FUTE85LF is a versatile and efficient power MOSFET array device that can be used in a wide range of applications. It provides high current control and efficient voltage-level translation, making it ideal for use in automotive, industrial, and telecom applications. The device is also RoHS compatible, making it suitable for industrial and telecom applications.

The specific data is subject to PDF, and the above content is for reference

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