SSM6J801R,LF

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The SSM6J801R, LF is a member of a family of single MOSFETs and is designed as a medium voltage FET in the LF family. It also has a low on-resistance of 2.6Ω and is capable of handling currents from 0.1 to 1 amperes (A). The SSM6J801R, LD is used for a wide range of applications, including medical, industrial and consumer electronics.

The SSM6J801RLF is a single monolithic MOSFET integrated circuit (IC) device. It is composed of a channel-depleted MOSFET coupled with a built-in gate driver. The device is also a medium-voltage FET and can be used as either a high-side or a low-side switch. Its on-resistance of 2.6Ω is suitable for applications where low-voltage loss is key, while its high-voltage and current capabilities are suitable for a range of other applications.

The SSM6J801RLF has an operating temperature range of -40°C to +125°C. This device is rated for 1A current and 600V voltage, with a power dissipation of 0.5W, 1.3W and 1.5W, respectively. The SSM6J801RLF has a low on-state resistance of 2.6Ω and a breakdown voltage of 600V. The device also offers an improved response time, which makes it suitable for high-speed ORing switches, lighting and different other applications.

The working principle of the SSM6J801RLF is as follows: The MOSFET consists of an insulated gate field-effect transistor, which is formed by a combination of a metal-oxide semiconductor (MOS) layer and an insulated gate. The metaloxide layer provides the necessary electrical insulation between the source gate and drain, while the insulated gate helps to control the width of the channel, thereby allowing current to flow from a higher voltage to a lower voltage. The applied voltage of the gate controls the flow of current through the drain. The applied voltage to the gate varies between 0 and 5V, depending on the type of application and the required on-resistance.

The SSM6J801RLF can be used in a variety of applications, including industrial and medical equipment, lighting, speed control in low-voltage systems, and automotive electronics. This device is also well suited for ORing (On/Off Release) Switches, which provide logic level switching and are used in logic/memory modules. In addition, this FET is also used in low-noise pre-amp and filter circuits.

In summary, the SSM6J801RLF is a single monolithic MOSFET IC device with a low on-resistance of 2.6Ω and a breakdown voltage of 600V. It offers excellent response time, making it suitable for a range of applications, including ORing (On/Off Release) Switches, lighting, industrial and medical equipment, speed control in low-voltage systems, and automotive electronics. The working principle of this device is that the applied voltage to the gate controls the current flow through the drain.

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