SSM6N35AFU,LF

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The SSM6N35AFU,LF is an array transistor module manufactured by SEIKO Instruments Inc. This module is constructed with four integrated FETs (Field Effect Transistors) in a single package. It is used for high-voltage, low-current applications such as switching, voltage regulation and protection circuits. The SSM6N35AFU,LF features low on-resistance, high current and break-loose protection, which make it an ideal choice for a variety of applications.

Application Field

The SSM6N35AFU,LF is a high-performance module typically used in consumer and commercial electrical and electronic equipment. It is suitable for switching, voltage regulation and protection circuits of high-voltage, low-current applications such as mobile phones, digital cameras, laptop computers and many other consumer products. It is also used in medical devices, data communication systems, industrial automation systems and motor control systems.

Working Principle

The SSM6N35AFU,LF is an N-channel enhancement-mode array transistor module. It consists of four FETs with high resistance, low drain to source on-state resistance (RDS(ON)). When a voltage is applied across the FETs\' gate and source terminals, electrons are migrated from the source terminal through the gate and into the silicon of the FET. This migration of electrons creates an inversion channel and generates a drain current. When the gate-source voltage increases above zero, the drain current increases exponentially with a high channel-current gain. In addition, the SSM6N35AFU,LF is designed with built-in break-loose protection, which helps protect the FETs from potential damage due to over heating.

The SSM6N35AFU,LF is an ideal choice for high-voltage, low-current applications such as switching, voltage regulation and protection circuits. It features low on-resistance, high current, break-loose protection and excellent thermal performance. Its highly reliable construction and robust performance make it an ideal choice for a wide range of applications.

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