Allicdata Part #: | SSM6L39TULFTR-ND |
Manufacturer Part#: |
SSM6L39TU,LF |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N/P-CH 20V 0.8A UF6 |
More Detail: | Mosfet Array N and P-Channel 20V 800mA 500mW Surfa... |
DataSheet: | SSM6L39TU,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09563 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 800mA |
Rds On (Max) @ Id, Vgs: | 143 mOhm @ 600MA, 4V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 268pF @ 10V |
Power - Max: | 500mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | UF6 |
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The SSM6L39TU,LF is a type of transistor array that was developed by Silicon Storage Technology, Inc. (SST). This array consists of four identical MOSFETs that are connected in series. This type of device is commonly used in applications such as high-speed switching, low-power amplification, low-noise gain control, and signal filtering. In this article, we will discuss the application field and working principle of the SSM6L39TU,LF.
The SSM6L39TU,LF device was designed for applications that require high-speed switching, low-power amplification, low-noise gain control, and signal filtering. It is primarily used in communication, automotive, industrial, and consumer electronics systems. This device is ideal for applications such as motor control, automotive engine management, data processing, and signal conditioning. It is also used in various types of power management systems.
The SSM6L39TU,LF operates by use of four MOS transistors which are arranged in a series configuration. The four MOS transistors are connected to one another via a common signal line. The signal line is connected to the gate inputs of each MOSFET. Each transistor can be independently switched off or on by the control signal. The MOSFETs are also connected to a common drain terminal to create the array.
When the signal applied to the gate of the MOSFETs is high, the device is in an on state; the gate source voltage of each MOSFET is high, thereby allowing electrons to flow from the source to the drain. When the signal applied to the gate is low, the device is in an off state and no current is allowed to flow from the source to the drain. By adjusting the voltage applied to the gate, it is possible to control the amount of current flowing through the device.
The SSM6L39TU,LF device has a number of advantages that make it suitable for use in high-speed switching, low-power amplification, low-noise gain control, and signal filtering applications. It has a low on-resistance of less than 10mΩ and can handle signal frequencies up to 100 MHz, which means it can be used in a wide range of applications. It also has an excellent frequency response, high signal-to-noise ratio, and low power consumption. The device is also highly reliable, with a maximum temperature rise of less than 8° C.
In conclusion, the SSM6L39TU,LF is a type of transistor array that is ideally suited for use in applications that require high-speed switching, low-power amplification, low-noise gain control, and signal filtering. It operates by use of four MOSFETs which are connected in series. The device has a low on-resistance and can handle signal frequencies up to 100MHz, making it suitable for many different applications. It also has an excellent frequency response and low power consumption. This makes the SSM6L39TU,LF an ideal choice for power management and signal conditioning applications.
The specific data is subject to PDF, and the above content is for reference
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