SSM6N57NU,LF Allicdata Electronics

SSM6N57NU,LF Discrete Semiconductor Products

Allicdata Part #:

SSM6N57NULFTR-ND

Manufacturer Part#:

SSM6N57NU,LF

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET 2N-CH 30V 4A UDFN6
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface ...
DataSheet: SSM6N57NU,LF datasheetSSM6N57NU,LF Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09683
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN(2x2)
Description

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SSM6N57NU,LF is a type of transistor which is considered a part of the Field Effect Transistor (FET) and Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) arrays. It is mainly used in audio and radio frequency applications, and it works by creating a conductive channel between the source and the drain leads. The SSM6N57NU,LF is a depletion-mode device, meaning that when no voltage is applied, the channel between the drain and source is in the off-state and no current flows. When a DC voltage is applied to the gate, it controls the current flow and allows for the on-state. Once this voltage is removed, the device goes automatically into the off-state. The SSM6N57NU,LF has a high breakdown voltage of 100 volts as well as a low on-resistance of 16 ohms. This transistor is able to provide low power yet high speed switching.

The SSM6N57NU,LF is mainly used in audio and radio frequency applications such as radio receivers, broadcast transmitters and audio amplifiers. This device is also suitable for voltage oscillators, mixers, modulators and buffer amplifiers. This device can also be used in DC power supplies where it is used to control the output current. Other applications include active protection circuits, ORing circuits and LED array drivers.

The SSM6N57NU,LF is an enhancement-mode device which means that when no voltage is applied, the channel between the drain and source is in the on-state and current can flow. In this mode, the device is able to provide a low power yet high speed switching. When a DC voltage is applied to the gate, it controls the current flow and allows for the off-state. This transistor is able to provide up to 8 amps of continuous current and 5 amps of pulsed current, making it suitable for a variety of applications.

The SSM6N57NU,LF is a versatile device that is widely used in audio, radio frequency, and other applications. It has a high breakdown voltage of 100 volts and a low on-resistance of 16 ohms, making it suitable for a variety of applications. The device also has a low power yet high speed switching capability, making it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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