| Allicdata Part #: | SSM6P15FE(TE85LF)TR-ND |
| Manufacturer Part#: |
SSM6P15FE(TE85L,F) |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET 2P-CH 30V 0.1A ES6 |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 100mA 150mW Su... |
| DataSheet: |  SSM6P15FE(TE85L,F) Datasheet/PDF |
| Quantity: | 1000 |
| 4000 +: | $ 0.06390 |
Specifications
| Vgs(th) (Max) @ Id: | 1.7V @ 100µA |
| Base Part Number: | SSM6P15 |
| Supplier Device Package: | ES6 (1.6x1.6) |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power - Max: | 150mW |
| Input Capacitance (Ciss) (Max) @ Vds: | 9.1pF @ 3V |
| Gate Charge (Qg) (Max) @ Vgs: | -- |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 12 Ohm @ 10mA, 4V |
| Current - Continuous Drain (Id) @ 25°C: | 100mA |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 P-Channel (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SSM6P15FE (TE85L,F) is a transistor array that incorporates a n-channel power MOSFET, with an associated driver transistor and gate resistor in a single-in-line (SIP) surface mount package. It is typically used in high-current, high-voltage switch-mode power supplies and other applications where switching high currents is necessary. The SSM6P15FE is a versatile device that is much easier to integrate into a circuit than having separate components.This MOSFET array is designed to be used in common-source or common-drain configurations. Its common-source configuration is most commonly used, due to its higher current ratings. However, when the circuit requires a high-side switch, the common-drain configuration is more suitable. The SSM6P15FE has a low on-resistance of only 60100mΩ and a drain-source breakdown voltage of 160V. The symmetrical layout of the SSM6P15FE makes it suitable for high-speed switching applications.The working principle of the SSM6P15FE is quite simple. When the gate is driven with a high enough voltage (1-4V typically), the MOSFET will turn on and allow current to flow from the drain to the source. The gate resistor is used to control the rise and fall times of the MOSFET and to limit inrush current into the circuit. Additionally, the gate resistor can also be used to limit the current to the gate, protecting it from damage. The driver transistor acts as an amplifier, boosting the gate current up to the required level.The SSM6P15FE offers the user a wide array of applications, most notably in high-current high-voltage switch-mode power supplies. Its high current ratings and low on-resistance make it suitable for high-speed switching applications. Additionally, its symmetrical layout can be beneficial in designs that require multiple switching circuits. The SSM6P15FE is also ideal for designs where it is necessary to limit inrush current or provide additional gate protection.Overall, the SSM6P15FE is a versatile MOSFET array that can be used in a wide range of applications. Its low on-resistance, high current ratings, and symmetrical layout make it suitable for high-power and high-speed switching applications. The integrated gate resistor offers the user additional protection, while the driver transistor provides additional amplification for the gate voltage. Thus, the SSM6P15FE is an excellent choice for designs that require high-current and high-voltage switching.
The specific data is subject to PDF, and the above content is for reference
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