SSM6N58NU,LF

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Transistors - FETs, MOSFETs - Arrays

The SSM6N58NU,LF are a type of transistor known as a field effect transistor (FET). This type of transistor is used in a variety of applications, from small signal logic switching to high-power audio where it can be used as an amplifier.

A FET is a three-terminal device composed of a source, gate, and drain. When a positive voltage is applied to the gate, it creates an electric field between the source and drain. This field affects the flow of electrons between the source and drain, enabling it to be used as a switch or amplifier.

The SSM6N58NU,LF is part of a FET array, which is a series of connected FETs. A FET array is used in specialised applications such as data switching or network communication. It is particularly suitable for these applications because of its low on-resistance, which means it can switch faster and have less power loss than discrete FETs.

The SSM6N58NU,LF are composed of two N-Channel MOSFETs, each with its own ON-OFF control input and drain-source ON-resistance. The FETs are connected in parallel to produce a lower total resistance. This allows for more efficient switching, faster switching speeds, and lower power consumption.

The SSM6N58NU,LF also have a built-in protection circuitry, which provides thermal and electrical protection from abuse. The FET array has a lockout voltage of -50 V, which prevents it from being overdriven and eliminates the possibility of false triggering.

In short, the SSM6N58NU,LF are an ideal choice for applications requiring both high-power and high-speed switching. It is frequently used in high-speed data switching, network communication, and power management applications. By leveraging their low on-resistance and built-in protection circuitry, the SSM6N58NU,LF can provide the high performance and reliability expected from a FET array.

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