Allicdata Part #: | SSM6N357RLFTR-ND |
Manufacturer Part#: |
SSM6N357R,LF |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | SMALL LOW R-ON MOSFETS DUAL NCH |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 650mA (Ta) 1.5... |
DataSheet: | SSM6N357R,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10107 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 650mA (Ta) |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 150mA, 5V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 12V |
Power - Max: | 1.5W (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | 6-TSOP-F |
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SSM6N357R,LF Application Field and Working Principle
SSM6N357R,LF is part of a series of Arrays from the semiconductor manufacturer Texas Instruments in the category of Field Effect Transistors (FET) and Metal Oxide Semiconductor FETs (MOSFET). This type of transistor is a three terminal device, where the input and output current and voltage characteristics are controlled by a voltage applied to the third terminal, the gate.
In its application field, the SSM6N357R,LF is a very flexible and versatile transistor array. It is well suited for use in various switching and analog applications, such as voltage and current control, power management, audio switching, RF switching and other switching applications. It can also be used in more unconventional applications such as logic translators and logic buffers.
In terms of its working principle, the SSM6N357R,LF is a four-input, C-input MOSFET array. It has four inputs that can be used for logic level control (3 logic inputs, one N-channel MOSFET and one P-channel MOSFET). The output can be either high or low, depending on the logic states of the inputs. The internal construction of the SSM6N357R,LF is based on a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), which is a three-terminal device. When a voltage is applied to the gate terminal, it controls the current flow between the source and the drain terminals. This transistor architecture provides highly efficient switching and linear control for a variety of analog and digital applications.
In terms of its performance, the SSM6N357R,LF transistors are highly efficient and very low in power consumption. The max gate voltage is 40V and the max drain-source voltage is 60V. The max power consumption of the SSM6N357R,LF is 2.5 Watt and the max current drawn per pin is 2A. It has fast switching speed of 15ns and low leakage currents of about 4nA.
The SSM6N357R,LF transistors are also very reliable in operation and can operate up to a temperature range of -55°C to 150°C. The power rating is 2.5 Watt and it can be used in various operating conditions such as low noise, high noise, and high DC offsets. Overall, the SSM6N357R,LF transistors are reliable and low in power consumption, making them ideal for a wide range of switching and analog applications.
The specific data is subject to PDF, and the above content is for reference
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