SSM6N35FE,LM

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Field-effect transistors (FETs) have been used increasingly over the past decades in various electronic applications. FETs are based on the same general principle as bipolar junction transistors (BJTs), in that they both use the carriers of one kind of semiconductor to control the current of the other kind. However, FETs are considered to be more reliable, efficient, and cheaper in comparison to BJTs making them of particular importance in modern applications. Amongst the different varieties of FETs, MOSFETs (metal-oxide-semiconductor field-effect transistors) hold the largest market share due to their superior characteristics and the availability of different packages such as the SOT (small-outline transistor) or the SOIC (small-outline integrated circuit in plastic) package which is easily integrated into the development of the particular device.When it comes to specific applications, two of the most popular FETs available on the market today are the SSM6N35FE, and the LM series of chips. Both of these FETs are based on a power MOSFET (metal-oxide-semiconductor field-effect transistor) design and offer a range of features and capabilities that make them suitable for various electrical engineering applications. This article will focus on the SSM6N35FE and the LM series of chips, including a discussion of the application fields, the working principles, and the main differences between them.The SSM6N35FE FET is a Power MOSFET designed to provide a fast and efficient switching solution in applications that require high voltage and large currents. It is especially suitable for use in AC mains applications, such as those found in motor control, automotive, and LED lighting. The SSM6N35FE is well known for its low on-state resistance and high threshold voltage. It is also capable of withstanding a wide operating temperature range, making it an excellent choice for hot and cold environment applications.The LM series of chips, on the other hand, is a versatile family of FETs that are suitable for a range of high power applications. The LM series is comprised of a range of High Voltage Logic Level Power MOSFETs, which are designed to operate at high voltages with simultaneous low threshold voltage and low on-state resistance. This makes them ideal for applications that require smooth and rapid switching, such as PWM circuits, DC/DC converters, and bridge rectifiers.The SSM6N35FE and the LM series both work on the same general principle, which is to control the current flow by using a carrier of one semi-conductor material to affect the flow of the other. This is accomplished by using a gate voltage which is applied to the semiconductors, allowing current flow or causing the current to be cut off. This is why these FETs are known as ‘field-effect’ transistors.In order to understand what makes these FETs suitable for their specific applications, it is necessary to consider the differences between them. Firstly, the SSM6N35FE has a low on-state resistance, meaning that it is better able to dissipate heat, making it suitable for high current applications. Additionally, it has a high threshold voltage which makes it suitable for AC main applications due to its ability to withstand high voltages. Whilst the LM series has a lower on-state resistance than the SSM6N35FE and is also better able to dissipate heat, it also has a lower threshold voltage which means that it is suitable for low voltage DC/DC applications.In conclusion, the SSM6N35FE and the LM series of FETs are two popular FETs available on the market today and are suitable for a range of high power applications. The SSM6N35FE is best suited for high voltage AC main applications, whereas the LM series is better suited for low voltage DC/DC applications. Both FETs work on the same general principle, however, the main differences between them are their on-state resistance and their threshold voltage.

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