SSM6N7002BFE(T5L,F Allicdata Electronics

SSM6N7002BFE(T5L,F Discrete Semiconductor Products

Allicdata Part #:

SSM6N7002BFE(T5LFCT-ND

Manufacturer Part#:

SSM6N7002BFE(T5L,F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET 2N-CH 60V 0.2A ES6
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 200mA 150mW Su...
DataSheet: SSM6N7002BFE(T5L,F datasheetSSM6N7002BFE(T5L,F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Base Part Number: SSM6N7002
Supplier Device Package: ES6 (1.6x1.6)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: --
Series: --
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT) 
Description

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Introduction

SSM6N7002BFE(T5L-F is a MOSFET array that belongs to a product family housed in the E4 package that contains two N-channel enhancement mode FETs. The SSM6N7002BFE(T5L-F is manufactured in 49 nm process technology and has a low on-state resistance. The product also offers great performance while consuming low power.

Application Field

The SSM6N7002BFE(T5L-F is suitable for a variety of applications that require high speed switching, including switching power supplies, DC/DC converters and motor controls. The device is also appropriate for applications that require low on-state resistance. Due to the device’s low power consumption, it is ideal for use in portable devices.

Working Principle

The SSM6N7002BFE(T5L-F is a two FETs array with two source, two drain, and one gate. A source terminal is provided for each FET, connected between the two FETs. The gate is connected to the source of the two FETs and contains a single gate terminal.The most important parameter for this device is the on-state resistance, which is provided by the two FETs. The two FETs work in parallel to produce a low on-state resistance. The device can work in either a linear or switch mode depending on the gate voltage. In switch mode, the gate voltage switches between gate 1 and gate 2. This switching is controlled by the gate voltage, which must be greater than the threshold voltage. If the threshold voltage is exceeded, the device switches onto the active state.

Conclusion

The SSM6N7002BFE(T5L-F is an N-channel MOSFET array that offers great performance while consuming low power. The device has high switching speeds and low on-state resistance making it suitable for many applications such as switching power supplies, DC/DC converters, and motor controls as well as in portable devices. The device works in either linear or switch mode depending on the gate voltage.

The specific data is subject to PDF, and the above content is for reference

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