
SSM6N7002BFE(T5L,F Discrete Semiconductor Products |
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Allicdata Part #: | SSM6N7002BFE(T5LFCT-ND |
Manufacturer Part#: |
SSM6N7002BFE(T5L,F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 60V 0.2A ES6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 200mA 150mW Su... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 3.1V @ 250µA |
Base Part Number: | SSM6N7002 |
Supplier Device Package: | ES6 (1.6x1.6) |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 150mW |
Input Capacitance (Ciss) (Max) @ Vds: | 17pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 500mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Cut Tape (CT) |
Description
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Introduction
SSM6N7002BFE(T5L-F is a MOSFET array that belongs to a product family housed in the E4 package that contains two N-channel enhancement mode FETs. The SSM6N7002BFE(T5L-F is manufactured in 49 nm process technology and has a low on-state resistance. The product also offers great performance while consuming low power.Application Field
The SSM6N7002BFE(T5L-F is suitable for a variety of applications that require high speed switching, including switching power supplies, DC/DC converters and motor controls. The device is also appropriate for applications that require low on-state resistance. Due to the device’s low power consumption, it is ideal for use in portable devices.Working Principle
The SSM6N7002BFE(T5L-F is a two FETs array with two source, two drain, and one gate. A source terminal is provided for each FET, connected between the two FETs. The gate is connected to the source of the two FETs and contains a single gate terminal.The most important parameter for this device is the on-state resistance, which is provided by the two FETs. The two FETs work in parallel to produce a low on-state resistance. The device can work in either a linear or switch mode depending on the gate voltage. In switch mode, the gate voltage switches between gate 1 and gate 2. This switching is controlled by the gate voltage, which must be greater than the threshold voltage. If the threshold voltage is exceeded, the device switches onto the active state.Conclusion
The SSM6N7002BFE(T5L-F is an N-channel MOSFET array that offers great performance while consuming low power. The device has high switching speeds and low on-state resistance making it suitable for many applications such as switching power supplies, DC/DC converters, and motor controls as well as in portable devices. The device works in either linear or switch mode depending on the gate voltage.The specific data is subject to PDF, and the above content is for reference
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