Allicdata Part #: | SSM6N61NULFTR-ND |
Manufacturer Part#: |
SSM6N61NU,LF |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 20V 4A UDFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4A 2W Surface ... |
DataSheet: | SSM6N61NU,LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.10893 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-UDFNB (2x2) |
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The SSM6N61NU,LF is a bipolar-type nitride-enhanced Metal Oxide Semiconductor Field-Effect Transistor. It belongs to the array type, meaning it is a set of transistors and is used in applications that require multiple transistors to work together. This specific transistor can be found in applications such as power amplifiers, motor drives, light fixtures and lighting control.
The SSM6N61NU,LF power MOSFET has two gates in a single package. One gate is the source gate, which supplies the source current to the source electrode. The other is the gate, which receives the control voltage from a controller and sends it directly to the gate of the transistor. This lets the gate control the current that flows from the source to the drain of the transistor.
When it comes to the workings of the SSM6N61NU,LF, it is essential to understand that current does not flow from the source to the draining like it does in a normal transistor. Instead, the current flowing from the source to the drain is modulated by a small electric field. This means that the current flowing from the source to the drain is determined by the voltage that the gate applies to the channel of the transistor.
Once the voltage applied to the gate of the transistor is changed, it will cause the electric field present in the channel to change as well. This in turn changes the current that is flowing from the source to the drain. This makes the SSM6N61NU,LF a very useful device for applications where it is needed to adjust or regulate the current flowing from the source to the drain.
The SSM6N61NU,LF can also be used in other applications such as audio amplifiers, switching regulators, motor drives, and more. Its capability to easily regulate the source-drain current makes it a versatile and useful transistor array. Its high switching speed and low harmonic distortion make it ideal for applications that require a high degree of accuracy.
When used in power amplifiers, the SSM6N61NU,LF can be used in a push-pull configuration. This configuration uses the power MOSFETs in the array to increase the power output of the amplifier by increasing the amount of current that flows through the components. This configuration also allows the amplifier to reach higher frequencies since the transistors are able to switch faster.
These are some of the key features of the SSM6N61NU,LF. It is a versatile array of transistors capable of being used for many different applications. Its ability to control the current that flows from the source to the drain makes it a great choice for applications that require high accuracy and efficiency. Thanks to its versatility and performance, the SSM6N61NU,LF is becoming an increasingly popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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