SSM6N7002BFU,LF Discrete Semiconductor Products |
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Allicdata Part #: | SSM6N7002BFULFTR-ND |
Manufacturer Part#: |
SSM6N7002BFU,LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 60V 0.2A US6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 200mA 300mW Su... |
DataSheet: | SSM6N7002BFU,LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 200mA |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 3.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 17pF @ 25V |
Power - Max: | 300mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
Base Part Number: | SSM6N7002 |
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The SSM6N7002BFU,LF is an advanced transistor array characterized by high performance, ruggedness and ease of use. This device, which is made of advanced silicon technology, is suitable for both general purpose and high voltage applications. It is particularly well-suited for applications that require precise current switching and low on-resistance. It is designed to provide robust and reliable operation under a wide range of operating conditions, including high temperature and high frequencies.
The SSM6N7002BFU,LF is a monolithic integrated circuit that contains four enhancement-mode n-channel MOSFET transistors. The transistors are connected in a common drain configuration, which allows the device to act both as a high voltage switch and as an amplifier. It also has two built in gate resistors, to provide protection against gate-induced overvoltage and transient spikes. The integrated circuit also includes a built in thermal shutdown circuit to protect against overheating.
The SSM6N7002BFU,LF is well-suited for use in a wide range of applications. It can be used for high voltage switch and amplifier applications, such as in power supplies and motor controls. It also can be used for driving sensors, such as infrared or hall effect devices. Finally, its high current capacity makes it a perfect choice for driving LEDs and logic circuitry.
Working with the SSM6N7002BFU,LF is straightforward and easy to understand. In its basic form, the device performs like an n-channel switch, allowing current to flow through the drain-source channel when the control voltage at the gate is greater than the threshold voltage. The integrated gate resistors can be used to control the gate voltage to make sure that the threshold voltage is not exceeded.
In addition, the SSM6N7002BFU,LF can be used as an amplifier. When a small signal is applied to the gate, its internal capacitance creates a small voltage increase across the gate-source channel. This voltage increase is then amplified through the device\'s internal amplifier, providing a larger output voltage across the drain-source. This feature makes the SSM6N7002BFU,LF useful for signal conditioning and signal amplification.
In conclusion, the SSM6N7002BFU,LF is a robust, reliable and easy to use transistor array that can be used for a wide range of high voltage switch, amplifier, and LED driving applications. Its integrated gate resistors provide reliable overvoltage protection and thermal shutdown provides protection against overheating. The device\'s simple operating principle allows it to be easily integrated into nearly any circuit application.
The specific data is subject to PDF, and the above content is for reference
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