Allicdata Part #: | SSM6L13TU(T5LFT)-ND |
Manufacturer Part#: |
SSM6L13TU(T5L,F,T) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N/P-CH 20V 800MA UF6 |
More Detail: | Mosfet Array N and P-Channel 20V 800mA (Ta) 500mW ... |
DataSheet: | SSM6L13TU(T5L,F,T) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
Rds On (Max) @ Id, Vgs: | 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 268pF @ 10V, 250pF @ 10V |
Power - Max: | 500mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | UF6 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): | 20V |
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The SSM613TU (T5L, F, T) is a transistor array that falls in the category of transistors – field effect transistors (FET) and metal-oxide-semiconductor FET (MOSFET) – arrays. The application of this particular array is mainly used in small amplifier stages, analog switching circuits, pulse generation, and power supply control.
The SSM613TU (T5L, F, T) consists of three N-channel FETs and three P-channel FETs arranged in an inverter network configuration. All six devices are connected in common source mode and share two common gates. This design allows signal levels to be inverted and amplified between the input and output stages.
Each N-channel FET has two source terminals and one drain terminal, while the P-channel FETs also have two source terminals and one drain terminal. The signal is applied to the common source terminals and the output signal is taken from the common drain terminals. The Common Gate serves as a connecting point between the source and drain terminals of the three N-channel and P-channel FETs.
The SSM613TU (T5L, F, T) offers several advantages compared to other FET arrays. It has a low on-state resistance and consumes very low quiescent power. The Common Gate signals are available as logic voltage levels and are ideal for use in logic circuits and in analog applications.
The working principle of the SSM613TU (T5L, F, T) is based on the concept of a transistor array. The main feature of the array is that it allows for the breakdown of a signal into multiple component parameters. The gain of each component can be controlled by the input signal to a certain extent. Thus, the SSM613TU (T5L, F, T) array can act as an amplifier and a switch or a driver for various applications.
The SSM613TU (T5L, F, T) array provides a wide range of performance and is suitable for use in many applications. It is an ideal choice for small amplifier stages, analog switching circuits, pulse generation, and power supply control. The array is also suitable for logic circuits and other analog operations such as signal handling, noise reduction and signal conditioning. This array is not only economical but also provides a highly efficient operation.
The specific data is subject to PDF, and the above content is for reference
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