SSM6N15AFU,LF Discrete Semiconductor Products |
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| Allicdata Part #: | SSM6N15AFULFTR-ND |
| Manufacturer Part#: |
SSM6N15AFU,LF |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET 2N-CH 30V 0.1A 2-2J1C |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 100mA 300mW Su... |
| DataSheet: | SSM6N15AFU,LF Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.04492 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 100mA |
| Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13.5pF @ 3V |
| Power - Max: | 300mW |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | US6 |
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SSM6N15AFU,LF is a part of a special array of transistors called Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs). It is an electric switch that is used in many electronics, including digital and analog switches and power amplifiers. The SSM6N15AFU,LF is a special type of FET array, including an SOI (Silicon on Insulator) device. It has a gate length of 0.54 micrometers and is designed for low voltage operation. Essentially, this transistor is designed to switch on and off in response to the gate voltage.
FETs, including MOSFETs, are three-terminal devices that use a gate voltage to control the current flow between the two main terminals (the source and the drain). The SSM6N15AFU,LF can be used for either N-type (NMOS) or P-type (PMOS) transistor applications. An NMOS transistor is an FET type organized with an N-type semiconductor material connected to the gate, source, and drain.
A PMOS transistor is an FET type organized with an P-type semiconductor material connected to the gate, source, and drain. Both NMOS and PMOS transistors are used for controlling current flow and voltage signals. When the gate voltage is applied to the FET, the gate-source voltage creates an electric field that depletes charge from a region near the gate, allowing current to flow from the source to the drain.
The SSM6N15AFU,LF can be used in various applications, including power management, audio, digital and analog switches, and amplifiers. Additionally, it can be used in voltage regulators, motor controllers, and DC-DC converter circuits. This FET array is suitable for high speed switching and low power dissipation applications. It features built-in over-voltage protection, an adjustable thermal break, and an adjustable power topology.
The SSM6N15AFU,LF has a wide operating temperature range of -55°C to 150°C, allowing it to be used in a variety of applications. It is a versatile FET array that is designed to meet the needs of many different types of circuits and electronics. It is a reliable, cost-effective choice for controlling current flow and voltage signals in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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SSM6N15AFU,LF Datasheet/PDF