Allicdata Part #: | SSM6P35FELM-ND |
Manufacturer Part#: |
SSM6P35FE,LM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2NCH 20V 100MA ES6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 100mA 150mW Su... |
DataSheet: | SSM6P35FE,LM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 100mA |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12.2pF @ 3V |
Power - Max: | 150mW |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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FETs (field-effect transistors) are used to amplify electrical signals, control currents, and serve as switching elements. FETs are also used in integrated circuits and as building blocks of digital devices. The SSM6P35FE and LM application field and working principle can provide a better understanding of these devices.
The SSM6P35FE and LM are two popular FETs types. The SSM6P35FE is a surface mounted FET that is ideal for high-speed applications. This FET is capable of carrying a high current and is also highly reliable. As it is a surface mounted FET, it can be easily incorporated into other circuits. The LM is a small signal MOSFET, meaning it is used for low-frequency, low-power applications. It is efficient and durable, and it is often used in audio and communication applications.
The application field of the SSM6P35FE and LM can be broken down by applications such as switching and analog circuit design. The SSM6P35FE is suitable for power switching circuits, such as motor control and automated systems and also for analog circuits such as audio amplifiers and oscilloscopes. The LM is often used in switching circuits as well, such as audio mixing circuits and also in analog designs, such as class-D audio amplifiers and high-frequency circuits.
The working principle of FETs is based on the penetration of the drain-source voltage (VDS) into the channel region of the device. This voltage causes a current to flow from the source to the drain, which is called the channel current (I). The channel current is controlled by the gate-source voltage (VGS). When VGS increases, the channel current will also increase. This is how FETs are able to amplify signals, control current, and serve as switches.
It is important to understand the application field and working principle of the SSM6P35FE and LM when using FETs. Both types of FETs can be used in a wide range of applications, and they can be used to amplify signals, control current, and serve as switching elements. Understanding the application field and working principle of the SSM6P35FE and LM is essential to ensure the proper operation and successful integration into a circuit.
The specific data is subject to PDF, and the above content is for reference
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