Allicdata Part #: | 497-16016-5-ND |
Manufacturer Part#: |
STFI13N65M2 |
Price: | $ 1.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 10A I2PAKFP |
More Detail: | N-Channel 650V 10A (Tc) 25W (Tc) Through Hole I2PA... |
DataSheet: | STFI13N65M2 Datasheet/PDF |
Quantity: | 1500 |
1 +: | $ 1.62540 |
10 +: | $ 1.47105 |
100 +: | $ 1.18182 |
500 +: | $ 0.91921 |
1000 +: | $ 0.76164 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI13N65M2 is a transistor of the FET and MOSFET family, specifically classified as a single FET. FETs stand for Field Effect Transistors and are one of the most important semiconductor devices in the world of electronics. FET based transistors, such as the STFI13N65M2, form the basis for many of the basic components in everyday electronics, from computers to cell phones. The advantageous properties of FETs, such as low power consumption, low capacitance and high input impedance, have rendered them invaluable for a variety of applications.
The STFI13N65M2 is a RoHS complaint N-channel enhancement mode power MOSFET that helps enable efficiency and reliability in power conversion circuits. It is a type of FET that can be used in many types of applications. Specifically, the STFI13N65M2 is specifically well-suited for a variety of applications in the automotive world, high-speed switching applications, and power conversion applications (involving the transmission and conditioning of power between voltages).
The STFI13N65M2 is a power MOSFET that works on the principle of channel enhancement, meaning that the application of an external voltage increases the conductivity of the device. The main benefit of this working principle is that it provides greater flexibility and control to the user, as the device can be switched on or off with the application of voltage. Additionally, the device only requires a small amount of input current to control large output currents, meaning that its power consumption is low. This is important for applications such as automotive, where the use of the most efficient circuit possible is essential.
Moreover, the STFI13N65M2 offers superior noise immunity, meaning that it is less affected by interference and other noise in an electrical system. This makes it particularly suitable for applications such as high-speed switching and power conversion, where a clean and consistent signal is essential. Additionally, the STFI13N65M2 features a low input capacitance and low gate charge, both of which allow it to quickly switch on and off. This makes it far more efficient than competing FET based transistors.
The STFI13N65M2 is part of the ‘PrimePACK’ family of products. PrimePACK technology is designed to provide superior temperature and power cycling. It does this via a combination of package and conductor design that allows for improved heat dissipation and protection from short circuits. As such, the device is able to perform longer and more reliably under more extreme operational conditions.
In summary, the STFI13N65M2 is a power MOSFET that works on the principle of channel enhancement. It is particularly suitable for applications such as automotive, high-speed switching, and power conversion due to its noise immunity, low power consumption, low input capacitance, and other features. Additionally, its ‘PrimePACK’ technology enables improved temperature and power cycling, resulting in greater resistance to shorts and improved heat dissipation. For these reasons, the STFI13N65M2 is a highly sought-after FET based transistor.
The specific data is subject to PDF, and the above content is for reference
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