Allicdata Part #: | STFI10LN80K5-ND |
Manufacturer Part#: |
STFI10LN80K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 8A I2PAKFP |
More Detail: | N-Channel 800V 8A (Tc) 20W (Tc) Through Hole I2PAK... |
DataSheet: | STFI10LN80K5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 427pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 630 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI10LN80K5 is a three-terminal, single-chip, monolithic, n-channel Enhancement-mode field-effect transistor (NMOSFET) from STMicroelectronics. It is a low-voltage device and is used for a variety of electronic applications, such as DC-DC conversion, audio power amplifiers, power supplies, and motor control.
Applications
The STFI10LN80K5 is widely used for a variety of electronic applications such as DC-DC conversion, audio power amplifiers, power supplies, and motor control. For DC-DC conversion, this device can be used for low-noise unipolar buck boost converters. These converters are ideal for applications where a constant output voltage is required, as they maintain a fixed output voltage even when the input voltage is varying.
In power amplifiers, this device helps to drive low-voltage, high-current loads such as loudspeakers. It is also used in audio power amplifiers as an output stage, where it is responsible for driving low-impedance loads. For motor control, the STFI10LN80K5 is an ideal choice, as it can drive large capacitive loads, making it suitable for automotive, factory automation and industrial stepper motor applications.
Working Principle
The STFI10LN80K5 works on the principle of electrostatic control of charges and currents. This device features a n-channel gate structure, which uses an insulated metal gate (IGFET) to control the flow of electrons between the drain and the source terminals by changing the voltage applied to the drain and gate. The voltage applied to the gate causes the various current carrying channels to open or close, and hence the current flow between drain and source is regulated. When the voltage applied to the gate is low, the channels are blocked, thereby preventing current flow. Increasing the gate voltage allows more current to flow, and hence, a wider range of power control is possible.
The STFI10LN80K5 is designed to handle high drain-source voltages up to 200V and can carry currents up to 20A. It also features internal thermal shutdown circuitry to protect it from overheating. Additionally, it has a low input capacitance and gate-source junction leakage current, making it suitable for switching applications.
Conclusion
The STFI10LN80K5 is an ideal solution for a variety of electronic applications, such as DC-DC conversion, audio power amplifiers, power supplies, and motor control. It is a three-terminal, single-chip, monolithic, n-channel Enhancement-mode field-effect transistor that works on the principle of electrostatic control of charges and currents. It is designed to handle high drain-source voltages up to 200V and can carry currents up to 20A, and features internal thermal shutdown circuitry to protect it from overheating.
The specific data is subject to PDF, and the above content is for reference
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