Allicdata Part #: | 497-13578-5-ND |
Manufacturer Part#: |
STFI10N65K3 |
Price: | $ 2.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 10A I2PAKFP |
More Detail: | N-Channel 650V 10A (Tc) 35W (Tc) Through Hole I2PA... |
DataSheet: | STFI10N65K3 Datasheet/PDF |
Quantity: | 1500 |
1 +: | $ 2.19240 |
10 +: | $ 1.95615 |
100 +: | $ 1.60404 |
500 +: | $ 1.29888 |
1000 +: | $ 1.09544 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1180pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI10N65K3 is a single-level N-channel metal oxide semiconductor field effect transistor (MOSFET) that was designed for high-speed switching applications. The device is a part of ST’s portfolio of power MOSFETs that are optimized for use in switching applications, with typical operating frequencies ranging from 100 to 400 kHz. The device has a drain current rating of up to 10 A at a drain-source voltage of 65 V and a maximum continuous drain-source on-state resistance of 0.034Ω. It is also capable of withstanding avalanche and short-circuit protection.
The STFI10N65K3 is provided in an SMD -ROHS and lead-free compatible PowerSO-10 package with a low thermal resistance of 3°C/W. The package is designed to maximize the power dissipation capacity of the part, allowing it to be used in high-power applications. It is also capable of current balancing and has been subjected to multiple manufacturing and quality tests.
Working Principle
MOSFETs are three-terminal semiconductors that are commonly used in electronic circuits. The STFI10N65K3 MOSFET operates on the principle of ‘source-drain current flow’. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the other two terminals, the source and the drain, causing them to move towards the gate. This creates a conducting channel between the source and the drain, allowing current to flow. The current flow is proportional to the voltage applied to the gate, up to a certain limit.
Application field
The STFI10N65K3 is ideal for power switching applications requiring high-speed performance. It can be used in DC/DC converters, battery chargers, stepping motor drivers, lighting control circuits, and many other consumer electronics applications.
It can also be used in automotive applications, such as fuel injection systems, powertrain control, and other electronic systems. Additionally, it can be employed in consumer appliances, including dishwashers and refrigerators.
In summary, the STFI10N65K3 MOSFET is a high-performance, single-level device that is suitable for switching applications, such as consumer electronics, automotive, and consumer appliance applications. It has a drain current rating of up to 10 A at a drain-source voltage of 65 V, and a maximum continuous drain-source on-state resistance of 0.034Ω. The part is also avalanche and short-circuit protected, making it an ideal choice for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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