STFI10N65K3 Allicdata Electronics
Allicdata Part #:

497-13578-5-ND

Manufacturer Part#:

STFI10N65K3

Price: $ 2.42
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 10A I2PAKFP
More Detail: N-Channel 650V 10A (Tc) 35W (Tc) Through Hole I2PA...
DataSheet: STFI10N65K3 datasheetSTFI10N65K3 Datasheet/PDF
Quantity: 1500
1 +: $ 2.19240
10 +: $ 1.95615
100 +: $ 1.60404
500 +: $ 1.29888
1000 +: $ 1.09544
Stock 1500Can Ship Immediately
$ 2.42
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-262-3 Full Pack, I²Pak
Supplier Device Package: I2PAKFP (TO-281)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STFI10N65K3 is a single-level N-channel metal oxide semiconductor field effect transistor (MOSFET) that was designed for high-speed switching applications. The device is a part of ST’s portfolio of power MOSFETs that are optimized for use in switching applications, with typical operating frequencies ranging from 100 to 400 kHz. The device has a drain current rating of up to 10 A at a drain-source voltage of 65 V and a maximum continuous drain-source on-state resistance of 0.034Ω. It is also capable of withstanding avalanche and short-circuit protection.

The STFI10N65K3 is provided in an SMD -ROHS and lead-free compatible PowerSO-10 package with a low thermal resistance of 3°C/W. The package is designed to maximize the power dissipation capacity of the part, allowing it to be used in high-power applications. It is also capable of current balancing and has been subjected to multiple manufacturing and quality tests.

Working Principle

MOSFETs are three-terminal semiconductors that are commonly used in electronic circuits. The STFI10N65K3 MOSFET operates on the principle of ‘source-drain current flow’. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the other two terminals, the source and the drain, causing them to move towards the gate. This creates a conducting channel between the source and the drain, allowing current to flow. The current flow is proportional to the voltage applied to the gate, up to a certain limit.

Application field

The STFI10N65K3 is ideal for power switching applications requiring high-speed performance. It can be used in DC/DC converters, battery chargers, stepping motor drivers, lighting control circuits, and many other consumer electronics applications.

It can also be used in automotive applications, such as fuel injection systems, powertrain control, and other electronic systems. Additionally, it can be employed in consumer appliances, including dishwashers and refrigerators.

In summary, the STFI10N65K3 MOSFET is a high-performance, single-level device that is suitable for switching applications, such as consumer electronics, automotive, and consumer appliance applications. It has a drain current rating of up to 10 A at a drain-source voltage of 65 V, and a maximum continuous drain-source on-state resistance of 0.034Ω. The part is also avalanche and short-circuit protected, making it an ideal choice for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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