Allicdata Part #: | STFI11N60M2-EP-ND |
Manufacturer Part#: |
STFI11N60M2-EP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V I2PAK-FP |
More Detail: | |
DataSheet: | STFI11N60M2-EP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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STFI11N60M2-EP is a typical static induction transistor (SIT), which is a type of field-effect transistor (FET). It is a single-phase, small-signal, surface-mount device that is designed for applications in power and communication systems, including high-performance applications. STFI11N60M2-EP is intended for use in power control and switching applications.
Static induction transistors are used for high-speed and high-current operations. They offer superior performance under a variety of conditions due to their high power density, low capacitance, low on-state voltage drops, and low drive power requirements. STFI11N60M2-EP can be used in applications such as switching power supplies, high-speed amplifiers, voltage regulators, motor control, and converters. In addition, it can be used in high-speed logic applications, such as logic gates and buffers.
STFI11N60M2-EP Working Principle
STFI11N60M2-EP works by invoking the principles of electron tunneling. The process of tunneling is when electrons jump across an energy barrier in a very short amount of time. In this way, an excess amount of current can be passed through a material without the need of physical movement of electrons. In STFI11N60M2-EP, an electric field is created by applying a voltage between the drain and gate of the transistor. This electric field is used to pull electrons out of their valence bands, allowing them to tunnel across the energy barrier and into the conduction band of the transistor. This, in turn, increases the number of electrons that can conduct in the device, thus increasing the overall current that can be passed through the device.
The electric field generated by the gate and drain of the device can also be used to control the number of electrons that are able to tunnel through the device. By changing the gate and source voltages, the number of electrons able to tunnel through the device can be adjusted. This is known as the device\'s transconductance, and it is what makes static-inductance transistors useful for controlling and regulating currents.
Conclusion
STFI11N60M2-EP is a static induction transistor designed for applications requiring high-speed and high-current operations. It is a single-phase, small-signal, surface-mount device, and it works by invoking the principles of electron tunneling. By adjusting the gate-source voltages, the number of electrons able to tunnel through the device can be adjusted, thus allowing the device to be used in a variety of power and communication applications, including switching power supplies, high-speed amplifiers, voltage regulators, motor control, converters, and high-speed logic applications such as logic gates and buffers.
The specific data is subject to PDF, and the above content is for reference
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