STFILED524

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STFET524 is a silicon gate N-channel depletion mode Field Effect Transistor (FET). It is designed for use in circuits that require insulation and low on-resistance in a small package. The STFET524 is composed of a three-terminal source, drain and gate. Its insulated gate allows excellent high-frequency performance and extremely low on-resistance. Furthermore, it has low gate-to-drain and gate-to-source capacitance, which makes it suitable for operations at high frequencies.

The STFET524 is an ideal choice for applications such as high-frequency switching, amplifier bias control and voltage switching applications due to its low on-resistance and high-frequency operation. Its robust gate insulation allows reliable operation even at high temperatures. It is also part of the “green” standards and is compliant with lead-free requirements. Because of its small size, the STFET524 is also used in mobile, LCD and other electronic applications where space is limited.

The working principle of the STFET524 is simple. When a voltage is applied to the gate of the device, a small drain-source current flows. This current causes the channel to become positively charged and pulls the p-type channel to the negative gate voltage. The amount of voltage required to nullify the channel between the drain and source is referred to as the threshold voltage or pinch-off voltage. As the drain-source voltage is increased, the already present positive charge accumulates, further opening the channel, or allowing more current to flow.

In summary, the STFET524 is a three-terminal N-channel depletion mode Field Effect Transistor (FET) designed for high-frequency applications. It has a low on-resistance and low gate-to-drain and gate-to-source capacitance making it suitable for high frequency operations. It is compliant with the “green” standards and is part of the lead-free requirements. Its small size allows it to be used in mobile, LCD and other electronic designs where space is limited. The working principle of the STFET524 is that when a voltage is applied to the gate of the device, a small drain-source current flows, causing a channel to pull the p-type channel to the negative gate voltage.

The specific data is subject to PDF, and the above content is for reference