Allicdata Part #: | 497-12857-5-ND |
Manufacturer Part#: |
STFI13NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 11A I2PAK FP |
More Detail: | N-Channel 600V 11A (Tc) 25W (Tc) Through Hole I2PA... |
DataSheet: | STFI13NM60N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI13NM60N is a N-channel enhancement mode, voltage controlled field effect power transistor. This power transistor is usually used in various electronic circuits and applications, with insulated gate terminals which provide improved reliability, performance and also protection from reverse power circuit application and also protection from overloading. It is designed for use in high power switching applications and is suitable for use in both high voltage and low power applications.
The STFI13NM60N is fabricated using advanced CMOS technology utilizing N-Channel MOSFETs to provide superior power handling and current flow capabilities. The N-channel enhancement mode MOSFET is used in a variety of applications such as switch mode resonant converters, high frequency power supplies, high power switching amplifiers and automotive electronic control systems. It is also used in a variety of consumer electronic devices such as cellular phones, computers and medical instruments. This power transistor can also be used in high peak current and high load control systems such as battery chargers, drives and industrial heating systems.
The STFI13NM60N has several advantages over other types of power transistors. Its N-channel MOSFET provides high frequency operation, low on resistance and low drain-source capacitance. Its low on-resistance makes it ideal for high frequency switching applications. It can operate over a wide temperature range and has a very low gate threshold voltage, which makes it more suitable for low power applications such as digital control circuits. The device also has built-in protection against overvoltage, over current, high temperature, overcharging and short circuit conditions.
The working principle of the STFI13NM60N is based on the basic MOSFET or metal oxide semiconductor field effect transistor. The principle involves an insulated gate electrode that controls an electric field. A voltage applied to the gate of the transistor will create a corresponding electric field that draws electrons from the source to the drain. As the voltage is increased, the resulting electric field will draw more electrons from the source to the drain region, thus increasing the flow of current from source to drain. Similarly, the flow of current will decrease as the voltage is decreased. This type of circuit is widely used in modern electronic circuits and systems where precise control of the power switching is essential.
The STFI13NM60N is a versatile power transistor and can be used in a variety of applications, such as switching voltage regulators, AC-DC converters and motor control circuits. It is also used in high frequency switching applications as it can operate at high frequencies. As its on-resistance is low, it is suitable for low power applications such as digital control circuits. It is also suitable for high load control systems, such as battery chargers, drives and industrial heating systems. The STFI13NM60N is an ideal solution for a wide range of power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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