Allicdata Part #: | 497-12856-5-ND |
Manufacturer Part#: |
STFI13NK60Z |
Price: | $ 2.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 13A I2PAK FP |
More Detail: | N-Channel 600V 13A (Tc) 35W (Tc) Through Hole I2PA... |
DataSheet: | STFI13NK60Z Datasheet/PDF |
Quantity: | 1385 |
1 +: | $ 2.27430 |
10 +: | $ 2.02860 |
100 +: | $ 1.66345 |
500 +: | $ 1.34699 |
1000 +: | $ 1.13602 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2030pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI13NK60Z is a high-performance N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) manufactured by STMicroelectronics used for various power-switching applications. Its advanced structure makes it suitable for use in higher-energy applications, where lower gate-capacitance, low on-resistance, a wide range of gate-source breakdown voltages, and low thermal resistance are the required criteria.
Application Field
The N-channel STFI13NK60Z is typically used in power-switching applications such as off-line switch-mode power supplies (SMPS), AC-DC converters and DC-DC converters. Its high temperature rating and low on-resistance make it suitable for use in high-power motor drives, power semiconductor modules, electric vehicles and other power-related industrial equipment.
Working Principle
The STFI13Nk60Z is an enhancement-mode MOSFET that operates with a voltage differential between the \gate-source and drain-source. The gate is used to control the flow of current between the drain and source by opening and closing the channel. When the channel is in the ‘open’ state, electrons can flow freely between the drain and source, depending on the voltage applied across the terminals. As the voltage increases further, the channel resistance increases and eventually the flow of current is completely blocked.
The STFI13NK60Z has a low input capacitance, which helps reduce overall power losses and thus increase efficiency. The device is optimized to provide efficient operation even in the most demanding applications. The output capacitance is also minimized, which helps ensure minimal current is drawn from the gate terminal.
The integrated enhanced body diode ensures that current flows in the correct direction, even under short-circuit conditions. The body diode also serves as a voltage clamp to limit the voltage across the MOSFET, preventing the device from being destroyed in the event of large voltage transients. This makes the STFI13NK60Z ideal for use in ‘hot-swap’ applications where a device may be connected and disconnected during operation.
The STFI13NK60Z is also designed to provide superior thermal performance, allowing it to operate in extreme conditions. The device also features an integrated temperature-sensing circuit, allowing the MOSFET to monitor its own temperature, providing protection against catastrophic thermal runaway.
The STFI13NK60Z is an ideal solution for a wide range of power-switching applications requiring high performance, reliability and protection. With its low gate-capacitance, low-input capacitance, low on-resistance and superior thermal performance, the STFI13NK60Z can provide efficient operation even in the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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