| Allicdata Part #: | 497-15001-5-ND |
| Manufacturer Part#: |
STFI28N60M2 |
| Price: | $ 4.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 22A I2PAK-FP |
| More Detail: | N-Channel 600V 22A (Tc) 30W (Tc) Through Hole I2PA... |
| DataSheet: |  STFI28N60M2 Datasheet/PDF |
| Quantity: | 500 |
| 1 +: | $ 3.90600 |
| 10 +: | $ 3.49020 |
| 100 +: | $ 2.86203 |
| 500 +: | $ 2.31755 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Full Pack, I²Pak |
| Supplier Device Package: | I2PAKFP (TO-281) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
| Series: | MDmesh™ II Plus |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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STFI28N60M2 is a kind of field effect transistor and belongs to the “Single” MOSFETs family. It is an insulated gate field effect transistor, which is mainly composed of three parts: source electrode, gate electrode and drain electrode. It can be used in a wide range of applications and its working principle is very simple.
The application areas of STFI28N60M2 are mainly related to power electronics and motor control. It can be used as a switch in motor control circuits and other applications where high efficiency and low power consumption are required. It can also be used in DC-DC converters to control the voltage and current levels of the output. Moreover, STFI28N60M2 can be used in microcontrollers, amplifiers, RFID readers, and other electronic products.
STFI28N60M2 is a MOSFET with a high transconductance, which means that the device can switch currents of high magnitude and low-level voltages. The working principle of this field effect transistor is essentially based on the voltage-controlled characteristics of the device. The device has three terminals, the source (S), the gate (G) and the drain (D) and can be used in an enhancement mode configuration. When the gate is electrically connected to the source, the channel between the source and the drain is closed, and current cannot flow. On the other hand, when a voltage is applied to the gate, it creates an electric field effect. This electric field will drive electrons from the channel and make them available to the channel, thus opening the channel and allowing current to flow. The controlling voltage at the gate determines the current flowing through the channel. This is the basic working principle of STFI28N60M2.
STFI28N60M2 has many advantages over other kinds of transistors. It has low “on” resistance, which means that the device can operate in high frequency applications with very high efficiency. The device is also capable of operating at high temperatures and can handle currents up to 60 A with its maximum voltage of 500 V. This makes the field effect transistor a great choice for many applications.
In conclusion, STFI28N60M2 is a single MOSFET with a high transconductance that can be used in a variety of applications. The device is capable of operating at high temperatures and can handle high currents. Additionally, the device is easy to use, with its simple working principle based on voltage-controlled characteristics. It therefore can be a great choice for power electronics and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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