Allicdata Part #: | 497-15020-5-ND |
Manufacturer Part#: |
STFI6N80K5 |
Price: | $ 1.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 4.5A I2PAK-FP |
More Detail: | N-Channel 800V 4.5A (Tc) 25W (Tc) Through Hole I2P... |
DataSheet: | STFI6N80K5 Datasheet/PDF |
Quantity: | 1488 |
1 +: | $ 1.71990 |
10 +: | $ 1.55610 |
100 +: | $ 1.25030 |
500 +: | $ 0.97245 |
1000 +: | $ 0.80575 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 100V |
Vgs (Max): | 30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI6N80K5 is a field effect transistor (FET) which belongs to the Single MOSFET category. This type of transistor has a wide range of applications, due to its ability to switch quickly and with low voltage. The STFI6N80K5 is a type of depletion-mode field effect transistor that uses a depletion-mode MOSFET structure.
A FET consists of an insulated gate, which is an electrode that is insulated from the rest of the transistor. An electric field is applied to the gate, and this creates a region of low resistance at the gate. This region is called the channel and is used to transfer current through the transistor. This allows current to be controlled both by the applied electric field and the voltage applied at the gate.
The STFI6N80K5 is a depletion-mode FET, which means that when no voltage is applied to the gate, the channel is in an open state, allowing current to flow freely. When the gate voltage is increased, the channel is pinched off, preventing current from flowing through the transistor. This makes this type of FET ideal for switching applications.
The STFI6N80K5 is a single MOSFET, which is a type of FET that contains one insulated gate. Single MOSFETs are relatively inexpensive and are highly efficient for switching applications. In addition, these transistors can be used for a variety of applications including low-power switching, analog switching, and signal processing.
The STFI6N80K5 is a MOSFET that is designed to be used in high-power switching and DC-DC converter applications. With its low ideal gate trigger voltage and low on-resistance, it is a great choice for these types of applications. When used in a switching circuit, the transistor acts as a switch, controlling the flow of current to an external load. It switches quickly, allowing a high-power device to be turned on or off with low voltage.
The working principle of the STFI6N80K5 is simple. When the gate voltage is pulled high, the channel is pinched off, preventing current from flowing through the transistor. When the gate voltage is pulled low, the channel is opened and current is allowed to flow. This allows for precise control of current flow in a wide variety of applications.
The STFI6N80K5 is a great choice for a variety of applications, due to its low trigger voltage and low on-resistance. It is especially useful for high-power switching applications in which low gate voltage and fast reaction time is required. This makes it ideal for use in DC-DC converters, power supplies, and a variety of other systems.
The specific data is subject to PDF, and the above content is for reference
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