STFI26NM60N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Full Pack, I²Pak
Supplier Device Package:	I2PAKFP (TO-281)
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	165 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STFI26NM60N Application Field and Working Principle

STFI26NM60N is a N-channel enhancement-mode vertical double diffused metal oxide semiconductor field effect transistor (DMOSFET), which integrates an N-channel vertical DMOS SRAM cell with an integrated connection between the drain and source of power-MOSFET. It is applied to the low-power, low-voltage step-down switching mode regulator and power switching applications.

Introduction

The STFI26NM60N is an integrated SRAM cell and power-MOSFET for low power, low voltage step-down switching mode regulator and power switching applications. It operates from a 5V to 24V supply voltage and a 4A to 6A drain current. The low Rds (on) of the device and reduced switching of the internal N-channel MOSFET result in improved power efficiency and improved dynamic performance. The device is compatible with voltage regulators with operating temperature range of -40℃ to +125℃, complimentary with STFI26NM60N devices.

Features

The device is designed with a variety of features and properties, such as:

• Integrated N-Channel MOSFET with 4A to 6A Drain Current in the On State
• Low On-State Resistance (Rds) for Improved Power Efficiency
• Internal Interconnects for Drain-to-Source and Gate-to-Source
• Low Voltage ON and OFF Design
• Reduced Maximum and Minimum Chip Temperature Rise
• Compatible with Voltage Regulators
• Operating Temperature Range of -40℃ to +125℃

Working Principle

The STFI26NM60N is a vertical double diffused N-channel MOSFET integrated with an SRAM cell on top. It consists of two pins; the source is connected to the chip’s ground while the drain is connected to the external power supply. A voltage is applied to the gate, which will turn on the device and allow current to flow from the source to the drain, resulting in power switching. The device features a low on-state resistance (Rds), which means that a lower voltage is required to turn the device on and that less power is lost when current flows through it. This leads to improved power efficiency and a lower maximum and minimum chip temperature rise during switching. Additionally, the device is designed such that it has minimal switching time and low charge losses. This makes the device suitable for low voltage and low power switching applications.

Applications

The STFI26NM60N provides superior performance in many low-power, low-voltage step-down switching mode regulator and power switching applications, such as:

• DC-DC converters
• DC motor control/inverter control
• Power line protection/surge protection
• Battery chargers
• Uninterruptible power supplies (UPS)
• Audio amplifiers
• Switch-mode power supplies (SMPS)
• Lighting systems

Conclusion

The STFI26NM60N is a low-power, low-voltage N-channel DMOSFET with an integrated SRAM cell that offers improved power efficiency and dynamic performance. With a wide operating temperature range, the device is well-suited for various low power switching mode regulator and power switching applications.

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