STFI13N80K5

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The STFI13N80K5 is a type of enhancement mode field effect transistor (FET), also known as a metal-oxide semiconductor field effect transistor (MOSFET). This particular type is a single-channel(channel type) N-type unit, which is the most widely used type of FET in modern design applications. The STFI13N80K5 is a Power MOSFET and is specifically designed for high temperature, low voltage, high frequency switched applications in telecommunications, industrial and automotive applications, as well as in power supplies.

A field effect transistor (FET) is a type of transistor that uses a voltage supplied to a gate electrode to control the current flowing through a channel region between the source and drain. The FET works by building up a static electric field inside and in the vicinity of the gate area which, in turn, controls the current flow within the transistor. This type of transistor is known for its low power consumption and high switching speed.

The STFI13N80K5 is an N-type power FET, which is configured as a three-terminal device with a source, gate, and drain. The main difference between N-type and P-type FETs is in their conductivity type: while N-type FETs are capable of only conducting electrons, P-type FETs are capable of conducting both electrons and holes. The STFI13N80K5 is specifically optimized for high switching frequency and low on-state resistance. The on-state resistance (RDS(on)) can be as low as 13 mOhms, making this FET an excellent choice for a wide variety of applications where current is an important factor.

The STFI13N80K5 has a minimum breakdown voltage (BV DSS) of 800 volts, making it suitable for a wide range of power supplies and automotive applications where a high voltage device is desired. It has a maximum drain-source voltage (V DS) of 240 volts and a maximum peak drain current (I D) of 18 amperes, making it suitable for applications that require a lower current. Additionally, its gate-source voltage (V GS) is rated at 10 volts, and is designed for maximum power handling. The device is also designed to be used in high frequent switching applications, with a minimum total gate charge (Q g) of 56.8nC.

The STFI13N80K5 is also suitable for use in applications that require a high-power FET because it has a high drain-source on-resistance (RDS(on)) and an extremely low gate charge (Qg). This FET is also well-suited for use in systems that require fast switching speeds and low power dissipation, as its are rated for maximum switching frequencies of 6MHz.

In conclusion, the STFI13N80K5 is one of the most popular N-type power FETs on the market today, offering an excellent combination of performance and power handling capabilities. This Power FET is designed for use in high frequency switched applications in telecommunications, industrial, automotive, and power supply applications and is specifically designed for high temperature, low voltage, and high frequency switched applications. Its low RDS(on) and extremely low gate charge make it well-suited for systems that require fast switching speeds and low power dissipation, making it an attractive choice for a variety of system designs.

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