STFI16N65M2 Allicdata Electronics
Allicdata Part #:

STFI16N65M2-ND

Manufacturer Part#:

STFI16N65M2

Price: $ 1.01
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V I2PAK-FP
More Detail:
DataSheet: STFI16N65M2 datasheetSTFI16N65M2 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.91396
Stock 1000Can Ship Immediately
$ 1.01
Specifications
Series: *
Part Status: Active
Description

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The STFI16N65M2 is a vertical trench insulated gate field-effect transistor (FET) produced by STMicroelectronics to provide more efficient power management and switching capabilities for numerous electronic applications. It utilizes advanced trench MOSFET technology to offer ultra-low on-resistance and very low gate charge. It also works at a wide range of temperatures and voltages.

The primary applications of this MOSFET are found in the power supply, DC-DC converter, and UPS industries. It is designed for switching deregulation and off-line applications, such as high-frequency ballast, appliance, industrial, light dimming, and white goods. With its advanced trench MOSFET technology, the STFI16N65M2 can also be used in other applications, such as switching applications, motor control, and load switching.

The working principle of the STFI16N65M2 is based on the same principle as all MOSFET transistors. It consists of a source, a drain, and a gate. When the gate is not biased, it is electrically neutral. However, when it is negatively biased, an electric field is generated at the gate-channel interface, attracting electrons to the channel, which turns the FET on. When the gate is positively biased, it creates an opposite electric field that pushes the electrons away from the channel, turning the FET off.

Besides its primary applications, the STFI16N65M2 can be used for numerous other applications. It is suitable for switching applications in which low on-resistance and low gate charge are required, such as those found in audio amplifiers, high-end audio, and RF power amplifiers. Additionally, the device has a wide temperature range of -55°C to 175°C, making it suitable for hazardous and extreme environment applications. Furthermore, the STFI16N65M2 is packaged in an 8-lead TO-220 form factor, offering excellent thermal performance and mounting convenience.

In summary, the STFI16N65M2 is a vertical trench insulated gate FET that offers enhanced power management and switching capabilities. It is specifically designed for switching deregulation and off-line applications, such as high-frequency ballast, appliance, industrial, light dimming, and white-goods. Additionally, its advanced trench MOSFET technology allows it to be used in numerous other applications. It features low on-resistance, low gate-charge, a wide temperature range, and excellent thermal performance.

The specific data is subject to PDF, and the above content is for reference

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