Allicdata Part #: | 497-13388-5-ND |
Manufacturer Part#: |
STFI11NM65N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 650V 11A I2PAKFP |
More Detail: | N-Channel 650V 11A (Tc) 25W (Tc) Through Hole I2PA... |
DataSheet: | STFI11NM65N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 455 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI11NM65N device is a type of field-effect transistor, and more specifically a type called a MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor. The STFI11NM65N MOSFET is a single device, with the letter "S" at the end of its part number denoting this single configuration. This type of MOSFET is often used in power applications, such as motor control, power supplies, and other high-current, high-voltage applications.
MOSFETs are transistors that are controlled by either a voltage or current that comes into one side of the device, known as the gate terminal. The gate terminal is the most important part of the device, as it allows the flow of current in the device to be turned on or off. The current that is released through the drain terminal will be controlled by the voltage applied to the gate terminal. The other two terminals on the MOSFET are the source and the drain. The voltage applied to the gate will determine the amount of current that can be released from the drain terminal.
One of the primary advantages of using a MOSFET device is that they have very low input voltage levels, compared to silicon BJT transistors. As the gate is only controlled by a certain voltage level, this allows for much lower operating voltages than would be possible if the gate was controlled by a current source. This makes MOSFETs ideal for use in power applications, as the power supply voltage can be much lower and the transistors can handle higher currents.
The STFI11NM65N is a power MOSFET with a maximum drain-source voltage of 650V, as indicated by the N in its part number. This type of MOSFET is used in applications such as motor control, power supplies, Uninteruptible Power Supplies (UPS), and other power applications. It is capable of releasing a large current when the voltage applied to the gate is increased, making it ideal for applications where large amounts of current are required.
The STFI11NM65N also has a maximum drain current of 11A, indicated by the 11N in its part number. This indicates that the device can handle up to 11A of current without damage to the device. This type of device is also used in power switching applications, as the high current output can be easily switched on or off via the gate voltage.
In summary, the STFI11NM65N is a high power MOSFET device, capable of operating at very low voltages and handling high current outputs. It is used in power applications such as motor control, power supplies and UPS systems. Its high drain current makes it ideal for use in these applications, as it can easily handle large amounts of current.
The specific data is subject to PDF, and the above content is for reference
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