STFI8N80K5 Allicdata Electronics
Allicdata Part #:

497-13868-5-ND

Manufacturer Part#:

STFI8N80K5

Price: $ 2.43
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 6A I2PAKFP
More Detail: N-Channel 800V 6A (Tc) 25W (Tc) Through Hole I2PAK...
DataSheet: STFI8N80K5 datasheetSTFI8N80K5 Datasheet/PDF
Quantity: 1490
1 +: $ 2.21130
10 +: $ 1.97442
100 +: $ 1.61891
500 +: $ 1.31092
1000 +: $ 1.10559
Stock 1490Can Ship Immediately
$ 2.43
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-262-3 Full Pack, I²Pak
Supplier Device Package: I2PAKFP (TO-281)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STFI8N80K5 is a type of Field Effect Transistor (FET). FETs are unipolar semiconductors, which means that electric charge carriers, or electrons, move in only one direction. They are used to amplify and switch electronic signals and power.

The STFI8N80K5 is a single MOSFET (metal-oxide-semiconductor field-effect transistor), so called because its semiconductor material is based on an oxide material. It is an n-channel, enhancement mode MOSFET transistor. This means that it is designed for signal amplifying and switching applications where the main requirement is increased input impedance, low signal distortion and low noise.

MOSFETs are divided into two groups: those with an "enhancement mode," and those with a "depletion mode." The STFI8N80K5 belongs to the enhancement mode group, meaning it is implemented to increase signal gain while providing high insulation from the film gate. The STFI8N80K5 uses an n-channel enhancement mode design, which has the advantage of providing higher levels of insulation for low voltage applications and minimizes power dissipation.

The STFI8N80K5 offers a number of features that make it a popular choice for many applications. It has an extended drain-source voltage range, allowing it to operate at higher input voltages. The on-resistance of the STFI8N80K5 is also low, meaning it requires less power to switch on and off, resulting in improved system efficiency.

The STFI8N80K5 is used in a wide range of applications, including audio amplifiers, motor control, display drivers, and other power control applications. It is particularly useful for power control applications due to its low on-resistance, high input impedance and low noise figure.

The working principle of the STFI8N80K5 is simple. It operates by allowing current to flow across a built-in p-n junction between a gate and source. When a positive voltage is applied to the gate, the junction is closed, allowing current to flow across it. When a negative voltage is applied to the gate, the junction is opened, and current does not flow.

The STFI8N80K5 is a popular FET due to its low power consumption, low noise and high reliability, making it the perfect choice for many applications. It’s long drain-source voltage range makes it ideal for use in power control applications, while its low on-resistance and high insulation provide excellent performance in audio and display-driver applications.

The specific data is subject to PDF, and the above content is for reference

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