Allicdata Part #: | 497-13868-5-ND |
Manufacturer Part#: |
STFI8N80K5 |
Price: | $ 2.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 6A I2PAKFP |
More Detail: | N-Channel 800V 6A (Tc) 25W (Tc) Through Hole I2PAK... |
DataSheet: | STFI8N80K5 Datasheet/PDF |
Quantity: | 1490 |
1 +: | $ 2.21130 |
10 +: | $ 1.97442 |
100 +: | $ 1.61891 |
500 +: | $ 1.31092 |
1000 +: | $ 1.10559 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI8N80K5 is a type of Field Effect Transistor (FET). FETs are unipolar semiconductors, which means that electric charge carriers, or electrons, move in only one direction. They are used to amplify and switch electronic signals and power.
The STFI8N80K5 is a single MOSFET (metal-oxide-semiconductor field-effect transistor), so called because its semiconductor material is based on an oxide material. It is an n-channel, enhancement mode MOSFET transistor. This means that it is designed for signal amplifying and switching applications where the main requirement is increased input impedance, low signal distortion and low noise.
MOSFETs are divided into two groups: those with an "enhancement mode," and those with a "depletion mode." The STFI8N80K5 belongs to the enhancement mode group, meaning it is implemented to increase signal gain while providing high insulation from the film gate. The STFI8N80K5 uses an n-channel enhancement mode design, which has the advantage of providing higher levels of insulation for low voltage applications and minimizes power dissipation.
The STFI8N80K5 offers a number of features that make it a popular choice for many applications. It has an extended drain-source voltage range, allowing it to operate at higher input voltages. The on-resistance of the STFI8N80K5 is also low, meaning it requires less power to switch on and off, resulting in improved system efficiency.
The STFI8N80K5 is used in a wide range of applications, including audio amplifiers, motor control, display drivers, and other power control applications. It is particularly useful for power control applications due to its low on-resistance, high input impedance and low noise figure.
The working principle of the STFI8N80K5 is simple. It operates by allowing current to flow across a built-in p-n junction between a gate and source. When a positive voltage is applied to the gate, the junction is closed, allowing current to flow across it. When a negative voltage is applied to the gate, the junction is opened, and current does not flow.
The STFI8N80K5 is a popular FET due to its low power consumption, low noise and high reliability, making it the perfect choice for many applications. It’s long drain-source voltage range makes it ideal for use in power control applications, while its low on-resistance and high insulation provide excellent performance in audio and display-driver applications.
The specific data is subject to PDF, and the above content is for reference
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